PART |
Description |
Maker |
K7A803600B-QC14 K7A803600B-QC16 K7A803609B K7A8036 |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM 256Kx36 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM 256Kx36 & 512Kx18 SRAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K7B803625B DSK7B803625B DS_K7B803625B K7B801825B K |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K7P801811B-HC27 K7P801811B-HC30 K7P801811B-HC25 K7 |
256Kx36 & 512Kx18 Synchronous Pipelined SRAM 256Kx36 & 512Kx18 Synchronous Pipelined SRAM 256Kx36
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K7B801825B |
256Kx36 & 512Kx18-Bit Synchronous Burst SRAM
|
Samsung Electronic
|
K7B803625M K7B801825M |
256Kx36 & 512Kx18 Synchronous SRAM
|
SAMSUNG[Samsung semiconductor]
|
K7B803625B K7B801825B |
256Kx36 & 512Kx18 Synchronous SRAM
|
Samsung semiconductor
|
K7N801801M |
256Kx36 & 512Kx18 Pipelined NtRAMData Sheet
|
Samsung Electronic
|
K7D801871B K7D801871B-HC37 K7D801871B-HC35 K7D8018 |
256Kx36 & 512Kx18 SRAM 1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
KM736V849 |
256Kx36-Bit No Turnaround SRAM(256Kx36位数据流无返回静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
M410000027 M410000022 M41000001Z M41000001W |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位个M × 8 2米x 16位).0伏的CMOS只,同时作业闪存兆位12亩x 8-Bit/256亩x 16位),静态存储器
|
Advanced Micro Devices, Inc.
|
AD1861R-J-REEL7 AD1851R-REEL7 AD1851RZ-J AD1851R-J |
16-Bit/18-Bit, 16 X Fs PCM Audio DACs 16-Bit/18-Bit6 X Fs的PCM音频数模转换 16-Bit/18-Bit/ 16 X Fs PCM Audio DACs LBS Series Full Extension Ball Bearing Slide, with Lock Out RoHS Compliant: Yes CONNECTOR ACCESSORY 16-Bit/18-Bit, 16 3 FS PCM Audio DACs
|
ANALOG DEVICES INC Analog Devices, Inc. http://
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