| PART |
Description |
Maker |
| TQM6M4028E |
3V Quad-Band GSM900 DCS Transmit Module
3V Dual-Band GSM900/DCS Transmit Module
|
TriQuint Semiconductor
|
| BGF944 |
GSM900 EDGE power module
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| HHM1720B2 HHM1776B3 HHM1726P1 HHM1763B2 |
Multilayer Balun Transformers For GSM900 Tx & Rx
|
TDK Electronics
|
| 1618-35 |
35 W, 28 V, 1600-1800 MHz common base transistor
35 Watt - 28 Volts, Class C Microwave 1600 - 1800 MHz
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 12A I(C) | FO-57DVAR 晶体管|晶体管|叩| 45V的五（巴西）总裁| 12A条一c）|7DVAR
|
GHZTECH[GHz Technology]
Fairchild Semiconductor, Corp.
|
| XRT7296IW XRT7296 XRT7296IP |
DS3/STS-1/E3 Integrated Line Transmitter
INTEGRATED LINE TRANSMITTER DATACOM, PCM TRANSCEIVER, PDSO28
INTEGRATED LINE TRANSMITTER SPECIALTY TELECOM CIRCUIT, PDIP28
|
EXAR[Exar Corporation]
Exar, Corp.
|
| TQM6M4022E |
3V Quad-Band GSM900 DCS Transmit Module
|
TriQuint Semiconductor
|
| RF3166D RF3166DPCBA-410 RF3166DSB |
DUAL-BAND GSM900/DCS POWER AMP MODULE
|
http://
RF Micro Devices
|
| FB190SA10 |
Power MOSFET, 190 A
|
Vishay Siliconix
|
| SF1122A |
190 MHz SAW Filter
|
RF Monolithics, Inc
|
| SKM145GB124D |
190 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON INTERNATIONAL
|
| RF3166 RF3166ASMPCBA-410 RF3166PCBA-410 RF3166SB |
QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE
|
http://
RF Micro Devices
|
| TQM7M4007-15 |
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module
|
TriQuint Semiconductor
|
