| PART |
Description |
Maker |
| CCR-33S3O-T CCR-33 CCR-33S1C-N CCR-33S1C-R CCR-33S |
Miniature DC-18GHz SPDT Switch 微型DC - 18GHz SPDT开
|
Teledyne Technologies, Inc.
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| TGS4301-EPU |
SPDT VPIN
High Power Ka-Band Absorptive SPDT Switch
|
TRIQUINT[TriQuint Semiconductor]
|
| MTD20N03HDL MTD20N03HL 20N03HL |
HDTMOS E-FET High Density Power FET DPAK for Surface Mount
TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS RDS(on) = 0.035 OHM
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| MTP3N50E MTP3N50E_D ON2604 MTP3N50 MTP3N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS
From old datasheet system
|
ON Semiconductor
Motorola, Inc.
|
| MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| MTP10N40 MTP10N40E ON2540 MTP10N40E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MTB2N60E_D ON2407 MTB2N60E MTB2N60E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 600 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTD12N06EZL_D ON2462 MTD12N06EZL-D |
TMOS E-FET High Energy Power FET DPAK for Surface Mount or Insertion Mount N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS
|
ON Semiconductor
|
| PE9354ES 9354-00 9354-01 9354-11 PE9354 PE9354-EK |
SPDT High Power UltraCMOS?/a> RF Switch Rad hard for Space Applications
SPDT High Power UltraCMOS RF Switch Rad hard for Space Applications
SPDT High Power UltraCMOSRF Switch Rad hard for Space Applications
SPDT High Power UltraCMOS⑩ RF Switch Rad hard for Space Applications
|
PEREGRINE[Peregrine Semiconductor Corp.]
|
| PDW06011 |
6-18GHz 2-way Wilkinson Power Divider
|
Dielectric Laboratories...
|
| MMFT2N25E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MTB8N50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
