PART |
Description |
Maker |
ITZ08F12P ITZ08F12B |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-247 TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-220AB 晶体管| IGBT的|正陈| 1.2KV五(巴西)国际消费电子展| 16A条一(c)| TO - 220AB现有
|
Microsemi, Corp.
|
FB514 FB612 FB614 FB522 FB524 FB523 |
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|1.2KV V(RRM)|25A I(T) 晶闸管模块|桥|半CNTLD |消委会| 1.2KV五(无线资源管理)|5A我(翻译 THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|600V V(RRM)|42.5A I(T) THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|1.2KV V(RRM)|42.5A I(T) THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|600V V(RRM)|25A I(T) THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|1.2KV V(RRM)|25A I(T) THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|800V V(RRM)|25A I(T)
|
Square D by Schneider Electric
|
70U120 |
Diode Switching 1.2KV 250A 2-Pin DO-9
|
New Jersey Semiconductor
|
CAS300M12BM2 |
1.2kV, 5.0 mΩ All-Silicon Carbide Half-Bridge Module
|
Cree, Inc
|
SGW15N120 |
TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,32A I(C),TO-247AC
|
Infineon
|
VS-SD603C20S20C VS-SD603C12S15C |
FAST RECOVERY RECTFR 2KV 600A 2PIN CASE B-43 - Bulk FAST RECOVERY RECTFR 1.2KV 600A 2PIN CASE B-43 - Bulk
|
Vishay Semiconductors
|
DMN2300U DMN2300U-7 |
20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 ESD Protected Gate 2kV
|
TY Semiconductor Co., Ltd
|
GP400LSS12S |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五(巴西)国际消费电子展|四楼一(c
|
ITT, Corp.
|
IRGRDN400M12 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五(巴西)国际消费电子展|四楼一(c
|
Diodes, Inc.
|
GP1600FSS12S |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 1.6KA I(C) 晶体管| IGBT功率模块|独立| 1.2KV五(巴西)国际消费电子展| 1.6KA一(c
|
Dynex Semiconductor, Ltd.
|