| PART |
Description |
Maker |
| MX26LV400TXBC-55G MX26LV400BXBC-70G MX26LV400TXBC- |
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY 256K X 16 FLASH 3V PROM, 55 ns, PDSO48
|
MACRONIX INTERNATIONAL CO LTD
Macronix International Co., Ltd.
http://
|
| K5A3X40YTC K5A3240YBC-T855 K5A3240YTC-T855 K5A3240 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power
Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM
524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM
RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA
512Kx8 bit CMOS static RAM, 100ns, low power
512Kx8 bit CMOS static RAM, 70ns, low power
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| BM29F400 BM29F400T |
5-Volt Flash 256Kx16/512Kx8
From old datasheet system
|
Winbond Electronics
|
| KM6164000B KM6164000BLI-L KM6164000BL-L KM6164000B |
256Kx16 bit Low Power CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| N04L163WC1A |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
|
NanoAmp Solutions
|
| MX29F040TC-55 MX29F040TC-12 MX29F040QC-90 MX29F040 |
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
| MX29F4000 MX29F4000PC-12 MX29F4000PC-55 MX29F4000P |
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
|
Macronix International
|
| MX23L4003 23L4003 |
4M-BIT [512Kx8] LOW VOLTAGE OPERATION CMOS MASK ROM
From old datasheet system
|
Macronix 旺宏
|
| KM684000B KM684000BL KM684000BLG-5 KM684000BLG-5L |
512K X 8 STANDARD SRAM, 70 ns, PDIP32
512Kx8 bit Low Power CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
