| PART |
Description |
Maker |
| IRF840 |
PowerMOS transistor Avalanche energy rated
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PHX4N60E |
PowerMOS transistors Avalanche energy rated
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PHP3N60E PHB3N60E |
PowerMOS transistors Avalanche energy rated
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PHX3N60E |
PowerMOS transistors Avalanche energy rated
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PHX3N50E |
PowerMOS transistors Avalanche energy rated
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PHX3N40E |
PowerMOS transistors Avalanche energy rated
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PHX10N40E |
PowerMOS transistors Avalanche energy rated
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PHP7N40E PHB7N40E |
PowerMOS transistors Avalanche energy rated
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PHU2N50E |
PowerMOS transistors Avalanche energy rated
|
Philips Semiconductors
NXP Semiconductors
|
| BUK444-200 BUK444-200A BUK444-200B BUK444 |
PowerMOS transistor 功率金属氧化物半导体晶体
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 100uF; Voltage: 200V; Case Size: 16x20 mm; Packaging: Bulk
PowerMOS transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PHD3N40E PHP3N40E PHB3N40E |
PowerMOS transistors Avalanche energy rated 2.5 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
