| PART |
Description |
Maker |
| MPS6717RLRA MPS6717_D ON2331 MPS6717 |
One Watt Amplifier Transistor(NPN Silicon) 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
One Watt Amplifier Transistor 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AE
CASE 29?4, STYLE 1 TO?2 (TO?26AA)
From old datasheet system
|
ON Semiconductor
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| MPS3391 MPS929 MPS930A MPS3390 MPS3396 MPS3397 MPS |
NPN silicon amplifier transistor. 45 V.
(MPS929 / MPS930A) AMPLIFIER TRANSISTOR
AMPLIFIER TRANSISTOR 放大器晶体管
|
Motorola, Inc
Motorola Mobility Holdings, Inc.
|
| MPS6717-D |
One Watt Amplifier Transistor NPN Silicon
Small Signal Amplifier NPN
|
ON Semiconductor
|
| UPA827 UPA827TF UPA827TF-T1 PA827TF |
High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD
|
NEC Corp.
|
| 2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB |
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
|
NEC[NEC]
NEC Corp.
|
| 154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五（巴西）总裁| 7.5AI（丙
|
NXP Semiconductors N.V.
Bel Fuse, Inc.
YEONHO Electronics Co., Ltd.
|
| 2SC5242 |
Power Amplifier Application NPN Transistor(功率放大器用NPN晶体 功率放大器应用NPN晶体管（功率放大器用npn型晶体管
NPN TRIPLE DIFFUSED(FOR POWER AMPLIFIER APLLICATIONS)
|
Toshiba, Corp.
|
| 2N4400 BT4400 |
NPN General Purpose Amplifier 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
NPN General Purpose Amplifier(NPN????ㄦ?澶у?
|
Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
|
| BD525 BD529 BD527 BD525-5 BD529-5 |
NPN silicon annular amplifier transistor. 10 W, 100 V.
NPN silicon annular amplifier transistor. 10 W, 60 V.
NPN SILICON AMPLIFIER TRANSISTORS
|
MOTOROLA[Motorola, Inc]
ETC
|
| 2SC2230 2SC2230A 2SC2230AGR |
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 100MA I(C) | TO-92VAR
Transistor Silicon NPN Triple Diffused Type (PCT Process) HIGH VOLTAGE GENERAL AMPLIFIER AND COLOR TV CLASS B SOUND OUTPUT APPLICATIONS
|
TOSHIBA
|
| G8051 |
The G8051 is designed for use in 2W output amplifier of portable radios in class B push-pull operation
NPN EPITAXIAL TRANSISTOR
NPN EPITAXIAL PLANAR TRANSISTOR
|
E-Tech Electronics LTD
List of Unclassifed Manufacturers
GTM CORPORATION
|
| 2SC4695 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | TO-236 晶体管|晶体管|叩| 20V的五（巴西）总裁| 500mA的一（c）|36
NPN Epitaxial Planar Silicon Transistor for Low-Frequency General-Purpose Amplifier,Muting Applications(低频通用放大器，噪声抑制应用的NPN硅外延平面型晶体
NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, Muting Applications
|
Hitachi,Ltd.
Sanyo Electric Co.,Ltd.
|
