| PART |
Description |
Maker |
| PTF10139 |
60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 60瓦，860-960兆赫GOLDMOS场效应晶体管
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| AM0912-080 2779 |
Circular Connector; No. of Contacts:37; Series:MS27505; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:15; Circular Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:15-35 RoHS Compliant: No
From old datasheet system
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| SD1458 2810 |
RF & MICROWAVE TRANSISTORS TVLINEAR APPLICATIONS
From old datasheet system
RF & MICROWAVE TRANSISTORS TV\LINEAR APPLICATIONS
|
STMICROELECTRONICS[STMicroelectronics]
|
| TCC597 SD1449 2888 |
UHF TV/LINEAR APPLICATIONS RF & MICROWAVE TRANSISTORS
From old datasheet system
RF & MICROWAVE TRANSISTORS UHF TV\LINEAR APPLICATIONS
RF & MICROWAVE TRANSISTORS UHF TVLINEAR APPLICATIONS
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| MSC82304 2764 |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
RF & MICROWAVE TRANSISTORS PRELIMINARY GENERAL PURPOSE AMPLIFIER APPLICATIONS
From old datasheet system
|
STMICROELECTRONICS[STMicroelectronics]
|
| UTV120 |
UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 12; Gain (dB): 8.9; Vcc (V): 26.5; ICQ (A): 1.7; IMD Type (dB): -52; Case Style: 55JT-2 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| AM1011-070 2702 |
RF & Microwave Transistors L-Band Avionics Applications(用于L波段航空电子应答询问机脉冲输出和驱动的RF和微波晶体管) 射频
From old datasheet system
RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| MRF373ASR1 MRF373AR1 MRF373A |
MRF373AR1, MRF373ALSR1 470-860 MHz, 75 W, 32 V Lateral N-Channel Broadband RF Power MOSFETs
RF POWER FIELD EFFECT TRANSISTORS
|
MOTOROLA[Motorola, Inc]
MOTOROLA [Motorola, Inc]
|
| AM0912-150 2777 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
From old datasheet system
AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| AM82731-050 2770 |
RF & Microwave Transistors S-Band Radar Applications(用于S波段雷达脉冲输出和驱动的RF和微波晶体管)
From old datasheet system
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| BGD902 BGD902112 |
860 MHz, 18.5 dB gain power doubler amplifier
40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors
|
