| PART |
Description |
Maker |
| MIP2C2 |
MIP2C2 High-Performance IPD for Battery Chargers
Power Supply Miscellaneous
High-Performance IPD for Battery Chaegers
|
PANASONIC CORP
Panasonic Semiconductor
Matsushita Electric Works(Nais)
|
| SCE5740 SCE5741 SCE5742 SCE5743 SCE5744 SCE5745 |
Dot Addressable Intelligent Display? Devices
Dot Addressable Intelligent Display㈢ Devices
|
OSRAM GmbH
|
| MIP804 MIP803 |
Power Device - IPD - For EL Driver
|
Panasonic
|
| MIP705 |
Power Device - IPD - For Lamp and Solenoid Driver
|
Panasonic
|
| MIP504 |
Power Device - IPD - For Lamp and Solenoid Driver
|
Panasonic
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| PXA168 |
High Performance, Highly Integrated Processor Scalable to 1.2 GHz for Cost-Sensitive, Intelligent Consumer and Embedded Devices
|
Marvell Technology Group Ltd.
|
| SCDV5543 SCDV5541 SCDV5540 |
Vertical Format 0.123" 4-Character 5x5 Dot Matrix Serial Input Dot Addressable Intelligent Display " Devices
From old datasheet system
|
Infineon
|
| MIG100Q6CMB1X |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| 6MBP15RH-060 6MBP15RH |
From old datasheet system
Intelligent Power Module ( RH-Series )
Intelligent Power Module ( RH-Series )
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| MIG50J101H |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| CY8C41223-24SXI CY8C41123-24SXI CY8C41123-24SXIT C |
Linear Power PSoC垄芒 Devices
Linear Power PSoC Devices
Linear Power PSoC?/a> Devices
|
Cypress Semiconductor
http://
|
