| PART |
Description |
Maker |
| M28010 M28010-10BA1T M28010-10BA6T M28010-10KA1T M |
1 Mbit 128K x 8 Parallel EEPROM With Software Data Protection
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| SST29VE010-200-4I-EHE SST29VE010-200-4I-WHE SST29V |
1 Mbit (128K x8) Page-Write EEPROM 128K X 8 FLASH 2.7V PROM, 150 ns, PDSO32
1 Mbit (128K x8) Page-Write EEPROM 128K X 8 EEPROM 3V, 150 ns, PDSO32
1 Mbit (128K x8) Page-Write EEPROM 128K X 8 EEPROM 3V, 200 ns, PDSO32
|
Silicon Storage Technology, Inc.
|
| CY7C109D-10VXI |
1-Mbit (128K x 8) Static RAM 128K X 8 STANDARD SRAM, 10 ns, PDSO32
|
Cypress Semiconductor, Corp.
|
| AS7C31025A-10TJI AS7C31025A-10JI AS7C31025A-10TJC |
Parallel-Load 8-Bit Shift Registers 16-SOIC -40 to 85 128K X 8 STANDARD SRAM, 10 ns, PDSO32
Parallel-Load 8-Bit Shift Registers 16-TVSOP -40 to 85 128K X 8 STANDARD SRAM, 10 ns, PDSO32
5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 10 ns, PDSO32
|
Alliance Semiconductor, Corp.
|
| M68AW128ML55ND6F M68AW128ML70ZB6T M68AW128M M68AW1 |
128K X 16 STANDARD SRAM, 70 ns, PDSO44
2兆位28K的16.0V异步SRAM
BACKSHELL
2 Mbit (128K x16) 3.0V Asynchronous SRAM
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| CY7C1340G-133AXC CY7C1340G-133AXI CY7C1340G-200AXC |
128K X 32 CACHE SRAM, 2.6 ns, PQFP100
4-Mbit (128K x 32) Pipelined DCD Sync SRAM
|
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1223H-166AXC CY7C1223H-166AXI CY7C1223H-133AXI |
2-Mbit (128K x 18) Pipelined DCD Sync SRAM 128K X 18 CACHE SRAM, 4 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1351G-133BGC CY7C1351G-133AXC CY7C1351G-133AXI |
4-Mbit (128K x 36) Flow-through SRAM with NoBLArchitecture 128K X 36 ZBT SRAM, 8 ns, PBGA119
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1351G-100AXC CY7C1351G-100AXI CY7C1351G-100BGC |
4-Mbit (128K x 36) Flow-through SRAM with NoBL Architecture
4-Mbit (128K x 36) Flow-through SRAM with NoBL?/a> Architecture
4-Mbit (128K x 36) Flow-through SRAM with NoBL⑩ Architecture
|
Cypress Semiconductor
|
| SST39LF200A-55-4E-B3K SST39LF800A-45-4E-B3K SST39V |
2 MBIT / 4 MBIT / 8 MBIT ( X 16 ) MULTI - PURPOSE FLASH
64 Mbit (x16) Multi-Purpose Flash Plus 128K X 16 FLASH 2.7V PROM, 70 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 256K X 16 FLASH 2.7V PROM, 70 ns, PDSO48
60Hz Power Quality Logger-Memobox; RoHS Compliant: NA 2兆位/ 4兆位/ 8兆位（x16）的多用途闪
64 Mbit (x16) Multi-Purpose Flash Plus 256K X 16 FLASH 2.7V PROM, 90 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 128K X 16 FLASH 2.7V PROM, 90 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 64兆位（x16）的多功能闪存加
64 Mbit (x16) Multi-Purpose Flash Plus 128K X 16 FLASH 3V PROM, 55 ns, PDSO48
Color Management System Feedback Controller
Bundle of Ultra Slim sensor with integrated LED, 12.9mm x 12.5mm PCB
Test, Calibration RoHS Compliant: NA
Color Management Controller with Integrated RGB Photosensor
Digital Multimeter; DMM Type:Handheld; DMM Response Type:True RMS; Series:Fluke 170; Calibrated:No RoHS Compliant: NA
Digital Multimeter; DMM Type:Handheld; DMM Response Type:True RMS; Series:Fluke 170; Certificate of Calibration:Yes With Data RoHS Compliant: NA
FLUKE-434/003 REFURBISHED BY NEWARK SERVICES
2-Input NOR Gate
IC LOGIC 1G86 SINGLE 2-INPUT EXCLUSIVE-OR GATE -40 85C SOT-23-5 3000/REEL
10-Element Bar Graph Array
2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technol...
|
| M36DR232A M36DR232BZA M36DR232AZA |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product 32兆位Mb x16插槽，双行，页闪存和2兆位128K的x16的SRAM，多个存储产
|
STMicroelectronics N.V.
http://
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