| PART |
Description |
Maker |
| X28HT010 X28HT010D-20 X28HT010D-25 X28HT010F-20 X2 |
High Temperature/ 5 Volt/ Byte Alterable E2PROM
High Temperature, 5 Volt, Byte Alterable E2PROM
|
XICOR[Xicor Inc.]
|
| 1N821 |
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
Microsemi Corporation
|
| USR1174 USR1171 USR1172 USR1173 |
11.7 VOLT ULTRA STABLE TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
MICROSEMI[Microsemi Corporation]
|
| TSIC-201 |
Precise, fast response and Low-cost Temperature Sensor IC Analog 0-1 Volt
|
Zentrum Mikroelektronik Dresden AG
Zentrum Mikroelektronik Dresden GmbH
N.A.
|
| X28HC256PI X28HC256DI-15C7871 |
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 28-PDIP 32K X 8 EEPROM 5V, PDIP28
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 28-CerDIP 32K X 8 EEPROM 5V, 150 ns, PDSO28
|
Intersil, Corp.
|
| 1N4783 1N4783A 1N4777A 1N4777 1N4778A 1N4778 1N478 |
Temperature Compensated Zener Reference Diodes(温度补偿齐纳基准二极 参考温度补偿齐纳二极管（温度补偿齐纳基准二极管
8.5 VOLT NOMINAL ZENER VOLTAGE 5%
|
Microsemi, Corp.
CDI-DIODE[Compensated Deuices Incorporated]
Compensated Devices Incorporated
|
| 1N4783 1N4783A 1N4777A 1N4777 1N4778A 1N4778 1N478 |
8.5 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 8.5 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AA
MKKDSN 1,5/ 8-5,08
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| AT49F1024 AT49F1024-50VC |
x16 Flash EEPROM
From old datasheet system
1-megabit (64K x 16) 5-volt Only Flash Memory
1M bit, 64K x 16, 5-Volt Read and 5-Volt Write Flash
|
Atmel Corp
|
| AM29F016 AM29F016-90 AM29F016-75 AM29F016-75FIB AM |
LM330 3-Terminal Positive Regulator; Package: TO-220; No of Pins: 3; Qty per Container: 45; Container: Rail
16-Megabit097152*8-bit）CMOS 5.0 Volt-only，sector Erase Flash memory
LM32 Dual Thermal Diode Temperature Sensor with SensorPath™ Bus; ; Qty per Container: 1
LM3310 Step-Up PWM DC/DC Converter with Integrated Op-Amp and Gate Pulse Modulation Switch; Package: LLP; No of Pins: 24; Qty per Container: 4500; Container: Reel 16兆位097152 × 8位）CMOS 5.0伏只，扇区擦除闪
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 120 ns, PDSO44
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 90 ns, PDSO48
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 150 ns, PDSO48
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 120 ns, PDSO48
|
Advanced Micro Devices, Inc.
SPANSION LLC
|
| 1N946B 1N946A 1N943B 1N943A 1N943 1N942B 1N942A 1N |
11.7 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
MICROSEMI[Microsemi Corporation]
|
| 1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N40 |
Rectifiers(整流 1 A, 1000 V, SILICON, SIGNAL DIODE
(1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction)
IC REG VOLT 4.8V 240MA SOT-23
Rectifiers(Rugged glass package/ using a high temperature alloyed construction)
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, SILICON, SIGNAL DIODE
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器（坚固的玻璃封装，采用高温合金建设
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, SILICON, SIGNAL DIODE
|
PHILIPS[Philips Semiconductors]
http://
NXP Semiconductors N.V.
|
