| PART |
Description |
Maker |
| 5962F0324801QXC 5962F0324801VXC ISL74422BRH ISL744 |
Radiation Hardened/ 9A/ Non-Inverting Power MOSFET Driver
Radiation Hardened, 9A, Non-Inverting Power MOSFET Driver 辐射硬化9A条，非逆变电源的MOSFET驱动
5V; radiation hardened, 9A, non-inverting power MOSFET driver. For switching power supplies, DC/DC converters, motor controllers
|
Intersil Corporation
Intersil, Corp.
|
| FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| HS-RTX2010 HS-RTX2010RH HS8-RTX2010RH HS9-RTX2010R |
Radiation Hardened Real Time Express??Microcontroller
Radiation Hardened Real Time ExpressMicrocontroller 16-BIT, 8 MHz, MICROCONTROLLER, CQFP84
Radiation Hardened Real Time ExpressMicrocontroller 16-BIT, 8 MHz, MICROCONTROLLER, UUC84
Dual J-K Positive-Edge-Triggered Flip-Flops With Clear And Preset 16-SOIC 0 to 70
Radiation Hardened Real Time Express Microcontroller
|
Advanced Analogic Technologies, Inc.
Intersil, Corp.
Intersil Corporation
|
| IRHE9230 IRHE93230 2048 |
200V, P-Channel Surface Mount Radiation Hardened Power MOSFET(200V,P沟道表贴型抗辐射功率MOS场效应管) 00V，P通道表面安装抗辐射功率MOSFET00V的电压，P沟道表贴型抗辐射功率马鞍山场效应管）
From old datasheet system
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
|
International Rectifier, Corp.
|
| ISR2800DESRH ISR2800DHURH ISR2800DHDRH ISR2805DHDR |
2-OUTPUT 2.5 W DC-DC REG PWR SUPPLY MODULE
Adj, Radiation hardened high-power, high efficiency DC-DC power converter
5V, Radiation hardened high-power, high efficiency DC-DC power converter
|
MS KENNEDY CORP
M.S. Kennedy Corp.
|
| JANSR2N7408 FN4637 |
Quadruple 2-Input Positive-NAND Gates 14-VQFN -40 to 85
Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system
Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant,N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| FSYC9160R FSYC9160R1 FSYC9160R3 FSYC9160R4 FSYC916 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
From old datasheet system
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 47 A, 100 V, 0.053 ohm, P-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| 5962F9467602VPA 5962F9467602VPC HS7B-1100RH-Q HS7- |
Radiation Hardened/ Ultra High Speed Current Feedback Amplifier with Offset Adjust
Radiation Hardened, Ultra High Speed
Current Feedback Amplifier(抗辐射超高速电流反馈放大器)
Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:Gray; Cable/Wire MIL SPEC:MIL-W-76C Type MW; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
Radiation Hardened, Ultra High Speed Current Feedback Amplifier VIDEO AMPLIFIER, CDIP8
Radiation Hardened, Ultra High Speed Current Feedback Amplifier 1 CHANNEL, VIDEO AMPLIFIER, CDIP8
Radiation Hardened, Ultra High Speed Current Feedback Amplifier
|
Intersil Corporation
Intersil, Corp.
|
| MX043G MX043J MX043 |
Radiation Hardended MOSFET
RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
MICROSEMI[Microsemi Corporation]
|
| IRHF57133SE |
RADIATION HARDENED POWER MOSFET
130V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-205AF package
|
International Rectifier
|
| IRHM7130 IRHM3130 IRHM8130 IRHM4130 |
100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
RADIATION HARDENED POWER MOSFET THRU-HOLE
|
IRF[International Rectifier]
|
| JANSR2N7498T2 IRHF57230SE |
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-205AF package
RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39) 抗辐射功率MOSFET的通孔（到39
|
IRF[International Rectifier]
International Rectifier, Corp.
|
