| PART |
Description |
Maker |
| 0R8GU41 |
RECTIFIER SILICON DIFFUSED TYPE HIGH SPEED RECTIFIER APPLICATIONS
TOSHIBA RECTIFIER SILICON DIFFUSED TYPE
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| S6968-01 |
MOSFET, Switching; VDSS (V): 60; ID (A): 2; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.111]; RDS (ON) typ. (ohm) @2.5V: 0.129; Ciss (pF) typ: 320; toff (µs) typ: 0.0397; Package: MPAK
|
Hamamatsu Photonics
|
| S7686 |
MOSFET, Switching; VDSS (V): -60; ID (A): -5; Pch : 20; RDS (ON) typ. (ohm) @10V: 0.14; RDS (ON) typ. (ohm) @4V[4.5V]: 0.2; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 10.8; Package: DPAK (L)- (2)
|
Hamamatsu Photonics
|
| E28 E116 E113 E30 E106 E103 E105 E112 E209 E3 E100 |
Yellow, mini LED. Lens translucent. Luminous intensity at 10mA: 2.0mcd(min), 3.5mcd(max). Forward voltage at 20mA: 2.1V(typ), 2.5V(max).
Orange InGaAIP, T-1 3/4, ultra bright LED. Lens orange translucent. Luminous intensity at 20mA: 700mcd(min), 3000mcd(max). Forward voltage at 20mA: 1.8V(typ), 2.3V(max).
Super bright green, mini LED. Lens translucent. Luminous intensity at 10mA: 10.0mcd(min), 16.0mcd(max). Forward voltage at 20mA: 2.2V(typ), 2.5V(max).
Green T-1, right angle LED(3mm). Lens diffused. Luminous intensity at 10mA: 5.0mcd(typ), 20.0mcd(max). Forward voltage at 20mA: 2.2V(typ), 2.5V(max).
Red T-1, right angle LED(3mm). Lens diffused. Luminous intensity at 10mA: 12.5mcd(typ), 32.0mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.5V(max).
T-1 bright white LED / Lens clear
Miniature LEDs 微型发光二极
Orange, mini LED. Lens translucent. Luminous intensity at 10mA: 3.0mcd(min), 7.0mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.6V(max).
Yellow T-1, right angle LED(3mm). Lens diffused. Luminous intensity at 10mA: 5.0mcd(typ), 20.0mcd(max). Forward voltage at 20mA: 2.1V(typ), 2.5V(max).
High efficiency red, mini LED. Lens translucent. Luminous intensity at 10mA: 4.0mcd(min), 7.0mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.5V(max)(max).
Ultra bright red, mini LED. Lens translucent. Luminous intensity at 10mA: 20.0mcd(min), 60.0mcd(max). Forward voltage at 20mA: 1.85V(typ), 2.5V(max)(max).
Yellow InGaAIP, T-1 3/4, ultra bright LED. Lens yellow translucent. Luminous intensity at 20mA: 400mcd(min), 1600mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.5V(max).
|
Gilway Technical Lamp
International Light Technologies Inc.
International Light Technologies, Inc.
|
| SW08CXC300 SW12CXC300 SW58CXC620 SW42CXC680 SW30CX |
650 A, 800 V, SILICON, RECTIFIER DIODE
650 A, 1200 V, SILICON, RECTIFIER DIODE
1520 A, 5800 V, SILICON, RECTIFIER DIODE
1610 A, 4200 V, SILICON, RECTIFIER DIODE
5100 A, 3000 V, SILICON, RECTIFIER DIODE
5100 A, 3200 V, SILICON, RECTIFIER DIODE
1030 A, 3600 V, SILICON, RECTIFIER DIODE
2050 A, 2800 V, SILICON, RECTIFIER DIODE
1860 A, 4000 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
| 1N4383 |
DIFFUSED-JUNCTION SILICON RECTIFIER
|
New Jersey Semi-Conductor Products, Inc.
|
| 1R5JZ41 1R5NZ41 |
Rectifier Silicon Diffused Type
|
TOSHIBA
|
| 2N2323 JANTX2N2323 JANTX2N2323A JANTX2N2323AS JANT |
SILICON CONTROLLED RECTIFIER
SILICON CONTROLLED RECTIFIER 0.3454 A, 200 V, SCR, TO-5
SILICON CONTROLLED RECTIFIER 1.6 A, 200 V, SCR, TO-205AD
LED RED DIFFUSED 1.8X3.5MM RECT SCR, TO-39
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| 05NH45 |
FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE
|
TOSHIBA
|
| U05GU4B48 |
SILICON DIFFUSED JUNCTION TYPE RECTIFIER STACK
|
GOOD-ARK[GOOD-ARK Electronics]
|
| BDY28 185T2 183T2 BDY27 184T2 BDY26 185T2C |
250V NPN silicon transistot, diffused mesa
200V NPN silicon transistot, diffused mesa
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 6A I(C) | TO-3 晶体管|晶体管|叩| 250V五（巴西）总裁| 6A条一（c）|3
NPN SILICON TRANSISTORS DIFFUSED MESA
180V NPN silicon transistot, diffused mesa
|
Cypress Semiconductor, Corp.
List of Unclassifed Manufacturers
ETC[ETC]
Comset Semiconductors
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