| PART |
Description |
Maker |
| 0234002.MXP 0234003.MXE- 0234003.MXEP 023406.3MXP |
234 Series, 5 x 20 mm, Medium-Acting Fuse
MEDIUM BLOW ELECTRIC FUSE, 1.25A, 250VAC, 100A (IR), INLINE/HOLDER
|
Littelfuse
|
| SBM52414X SBM52414Z SBM51414G SBM51414N SBM51414Z |
Medium Power BIDI Optical Standard Module 1310 nm Emitting, 1550 nm Receiving 中功率比迪光学标准模310纳米发光550纳米接收
Transceiver
Components and FTTx solutions - Tx 1310nm/Rx 1550nm, Medium Power
|
INFINEON[Infineon Technologies AG]
|
| INA-34063 |
3.0 GHz Medium Power Silicon RFIC Amplifier(3.0 GHz中等功率硅射频集成电路放大器)
3V Fixed Gain. Medium Power Amplifier
3.0 GHz的中功率硅射频放大器.0千兆赫中等功率硅射频集成电路放大器）
|
Agilent(Hewlett-Packard)
|
| 2SC3670 E000875 |
NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM OWER AMPLIFIER APPLICATIONS)
RECTIFIER STANDARD SINGLE 1A 100V 100 30A-ifsm 5uA-ir 1V-vf DO-41 1K/BULK
STOROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
From old datasheet system
NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM OWER AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SA1969 |
PNP Epitaxial Planar Silicon Transistor High-Frequency Medium-Output Amplifier,Medium-Current Ultrahigh-Speed Switching Applications
PNP Epitaxial Planar Silicon Transistors
|
Sanyo
|
| 2SB1182 2SB1188 2SB822 2SB911M 2SB1240 A5800350 2S |
From old datasheet system
Medium power Transistor(-32V/ -2A)
Medium power Transistor(-32V, -2A) 中等功率晶体管（- 32V的，- 2A型）
|
Rohm Co., Ltd.
|
| 5082-2207 50822207 |
SCHOTTKY MEDIUM BARRIER DIODE SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
From old datasheet system
|
ASI[Advanced Semiconductor]
Advanced Semiconductor, Inc.
|
| FZT605 FZT605TC |
SOT223 NPN SILICON PLANAR MEDIUM
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
|
Diodes Incorporated
Diodes Inc.
ZETEX[Zetex Semiconductors]
|
| CSA968A CSA968 CSA968B CSA968BO CSA968BY CSA968AY |
25.000W Medium Power PNP Plastic Leaded Transistor. 180V Vceo, 1.500A Ic, 70 - 140 hFE. Complementary CSC2238AO
25.000W Medium Power PNP Plastic Leaded Transistor. 180V Vceo, 1.500A Ic, 120 - 240 hFE. Complementary CSC2238AY
25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 120 - 240 hFE. Complementary CSC2238BY
25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 70 - 140 hFE. Complementary CSC2238BO
25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 70 - 240 hFE. Complementary CSC2238B
25.000W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 70 - 240 hFE. Complementary CSC2238
PNP PLASTIC POWER TRANSISTORS
Single-Phase Filter; Filter Type:RFI; Current Rating:16A; Voltage Rating:250V; Capacitance:1uF; Inductance:0.6uH; Mounting Type:Flange; Series:FN2060; Terminal Type:Quick Connect RoHS Compliant: Yes
|
Continental Device India Limited
|
| LMA443 |
31GHz Medium Power Amplifier
31 GHz Medium Power Amplifier
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| BAT14-03 BAT14-03W Q62702-A1103 BAT1403W |
Silicon Schottky Diode (DBS mixer application to 12GHz Medium barrier type Low capacitance) SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
