| PART |
Description |
Maker |
| IRHQ6110 IRHQ63110 |
TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 100V V(BR)DSS | 3A I(D) | LLCC 晶体管| MOSFET的|阵|互补| 100V的五（巴西）直| 3A条（丁）| LLCC
RADIATION HARDENED POWER MOSFET
|
HIROSE ELECTRIC Co., Ltd.
International Rectifier
|
| BA12003B BA12003BF BA12004B BA12001B BA12003B/BF |
Standard Linear LSIs > Transistor array
High voltage high current Darlington transistor array
High voltage, high current Darlington transistor array
From old datasheet system
|
ROHM[Rohm]
|
| AP0440ND |
TRANSISTOR | MOSFET | ARRAY | P-CHANNEL | 400V V(BR)DSS | 15MA I(D) | CHIP 晶体管| MOSFET的|阵| P通道| 400V五（巴西）直|5mA（丁）|芯片
|
ON Semiconductor
|
| AP0130 AP0130NA AP0130NB AP0130ND AP0132ND AP0132N |
ER 7C 7#16S PIN RECP
AB 5C 5#12 PIN RECP
8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 15 mA, 320 V, 8 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 8通道阵列单片功率MOSFET N沟道增强模式
8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 15 mA, 160 V, 8 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 15 mA, 300 V, 8 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 200 V, 8 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
AB 5C 5#12 SKT RECP 8通道阵列单片功率MOSFET N沟道增强模式
|
SUTEX[Supertex Inc]
Supertex Inc
SUTEX[Supertex, Inc]
Supertex, Inc.
|
| BCV62B BCV62C BCV62 BCV62A BCV62B/T1 |
TRANSISTOR SOT-23 晶体管的SOT - 23
PNP general purpose double transistor
TRANSISTOR|BJT|ARRAY|BLDGBLOCK|30VV(BR)CEO|100MAI(C)|SOT-143
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| LS4D28-100-RN LS4D28-270-RN LS4D28-271-RN LS4D28-3 |
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= 0.2 V, Enhancement Mode, 8L SOIC, EPAD Enabled 1 ELEMENT, 3.9 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface Mount Power Inductors 1 ELEMENT, 12 uH, GENERAL PURPOSE INDUCTOR, SMD
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= 0.0 V, 8L PDIP, EPAD Enabled
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= 0.4 V, Enhancement Mode, 8L PDIP, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= 1.4 V, 16L SOIC, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= 1.4 V, 16L PDIP, EPAD Enabled
|
http://
ICE Components, Inc.
ICE COMPONENTS INC
|
| MHT8P20 MTP3N12 VN2410B |
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-258AA
TRANSISTOR | MOSFET | N-CHANNEL | 120V V(BR)DSS | 3A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 240V V(BR)DSS | 700MA I(D) | TO-39 晶体管| MOSFET的| N沟道| 240伏五（巴西）直| 700mA的一d）| TO - 39封装
|
Microchip Technology, Inc.
|
| MC3346-D |
General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays
|
ON Semiconductor
|
| UPA1456 UPA1456H |
NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE
|
NEC[NEC]
|
| IXTL13N65 IXTH24N45 IXTL18N50 IXTL24N40 IXTH21N45 |
TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 13A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 24A I(D) | TO-218VAR
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 18A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 24A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 21A I(D) | TO-218VAR 晶体管| MOSFET的| N沟道| 450V五（巴西）直| 21A条（丁）|18VAR
TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 18A I(D) | TO-3 晶体管| MOSFET的| N沟道|650V五（巴西）直| 18A条（丁）|
|
IXYS, Corp.
|
| M54522P11 M54522FP M54522P |
400 mA, 40 V, 8 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
