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BSS192 - P-channel vertical D-MOS intermediate level FET P沟道垂直 D-MOS 中间级场效应 N-channel TrenchMOS TM transistor

BSS192_308366.PDF Datasheet

 
Part No. BSS192
Description P-channel vertical D-MOS intermediate level FET P沟道垂直 D-MOS 中间级场效应
N-channel TrenchMOS TM transistor

File Size 58.66K  /  12 Page  

Maker

NXP Semiconductors N.V.
Philips



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(CHINA HK & SZ)
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Part: BSS192
Maker: PHILIPS
Pack: SOT-89
Stock: Reserved
Unit price for :
    50: $0.19
  100: $0.18
1000: $0.17

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 Full text search : P-channel vertical D-MOS intermediate level FET P沟道垂直 D-MOS 中间级场效应 N-channel TrenchMOS TM transistor
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