| PART |
Description |
Maker |
| M27256-20 M27256-25 M27256-35 M27256 |
256K(32K x 8) UV ERASABLE PROM
|
Intel Corp.
INTEL[Intel Corporation]
|
| 87C256-20FA |
256K (32K x 8) CMOS UV Erasable PROM
|
Signetics
|
| CY7C271A-30PC CY7C271A-35WC CY7C271A CY7C271A-25JC |
32K x 8 Power Switched and Reprogrammable PROM 32K X 8 UVPROM, 35 ns, CDIP28
32K x 8 Power Switched and Reprogrammable PROM 32K X 8 OTPROM, 35 ns, PDIP28
Memory : PROMs
|
Cypress Semiconductor, Corp.
|
| IS25C64A-3ZLA1 IS25C32A IS25C32A_07 IS25C32A-2GI I |
32K-BIT/64K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
|
ISSI[Integrated Silicon Solution, Inc]
|
| BR24L08FVM-W BR24L08FJ-W BR24L08FV-W BR24L08F-W BR |
10248 bit electrically erasable PROM
1024】8 bit electrically erasable PROM
|
ROHM[Rohm]
|
| WS57C71C-3 WS57C71C-5 WS57C71C-55JI WS57C71C-55J W |
HIGH SPEED 32K x 8 CMOS PROM/RPROM 高2K的8的CMOS胎膜早破/ RPROM
MILITARY HIGH SPEED 32K x 8 CMOS PROM/RPROM
WS57C71C HIGH SPEED 32K X 8 CMOS PROM/RPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
N.A.
ST Microelectronics
|
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
| HN27C256G HN27C256G-17 HN27C256G-25 HN27C256G-20 |
256K (32K x 8-bit) UV EPROM, 200ns
256K (32K x 8-bit) UV EPROM, 250ns
32768-WORD x 8-BIT CMOS UV ERASABLE AND PROGRAMMABLE ROM
256K (32K x 8-bit) UV EPROM, 170ns
|
Hitachi Semiconductor
|
| 24AA1603 24LC16B 24AA16-I/MS 24AA16-I/MSG 24AA16-I |
16K I2C垄芒 Serial EEPROM
16K I2C?/a> Serial EEPROM
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C™ compatible 2-wire serial interface bus. The 24LC16B features hardware write protect, Schmitt trigger in
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C™ ...
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I<SUP>2</SUP>C™ ...
16K I2C Serial EEPROM
|
Microchip Technology Inc.
|
| X2402 X2402PI X2402I |
ELECTRICALLY ERASABLE PROM
|
XICOR[Xicor Inc.]
|
| UPD2716 |
16384 Bit UV Erasable PROM
|
NEC
|
| KM28C64A KM28C65A |
8K x 8 BIT CMOS ELECTRICALLY ERASABLE PROM
|
Samsung Electronic
Samsung semiconductor
|
