| PART |
Description |
Maker |
| HUF76407D3 HUF76407D3S HUF76407D3ST |
11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFETPower MOSFET
11A,60V, 0.107 Ohm, N-Channe, Logic Level UltraFET Power MOSFET
|
Fairchild Semiconductor
|
| RFP2N20 FN2881 |
2A/ 200V/ 3.500 Ohm/ N-Channel Power MOSFET
2A 200V 3.500 Ohm N-Channel Power MOSFET
From old datasheet system
2A, 200V, 3.500 Ohm, N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| RFP2N20L FN2875 |
2A/ 200V/ 3.500 Ohm/ Logic Level/ N-Channel Power MOSFET
2A 200V 3.500 Ohm Logic Level N-Channel Power MOSFET
From old datasheet system
2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| IRF9640 IRF9640PBF |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-11A)
Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-11A)
Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-11A)
|
IRF[International Rectifier]
|
| IRF610 |
3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
|
Fairchild Semiconductor
|
| IRFR9220 |
3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs
|
Fairchild Semiconductor
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| IRFR9220 IRFU9220 FN4015 |
P Channel Power MOSFET
3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| IRFM9240U |
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 11A I(D) | TO-254VAR 晶体管| MOSFET的| P通道| 200伏五（巴西）直| 11A条（丁）|54VAR
|
International Rectifier, Corp.
|
| C430TX555 C430EX555 C430MX555 C430NX555 C430PAX555 |
240 x 128 pixel format, STN Blue
CAP 0.01UF 200V 200V X7R RAD.20 .30X.30 BULK R-MIL-PRF-39014 STANDOFF
Phase Control SCR 760 Amperes Avg 500-1300 Volts 相位控制晶闸管七百六十安培平500-1300伏特
Phase Control SCR 760 Amperes Avg 500-1300 Volts 相位控制晶闸管七百六十安培平00-1300伏特
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| IRFP340 FN2088 |
From old datasheet system
11A, 400V, 0.550 Ohm, N-Channel Power MOSFET
|
Intersil Corporation
|
| HUF76407D3 HUF76407D3S |
11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
Fairchild Semiconductor
|
