| PART |
Description |
Maker |
| AT28LV256 DOC231 AT28LV256-25TI AT28LV256-20 AT28L |
256K 32K x 8 Low Voltage CMOS E2PROM
From old datasheet system
256K (32K x 8) Low Voltage
|
ATMEL[ATMEL Corporation]
|
| AT27C256 AT27C256R AT27C256R-12 AT27C256R-12JC AT2 |
256K 32K x 8 OTP CMOS EPROM
256K (128K x 8) OTP CMOS EPROM
High-Speed CMOS Logic Phase-Locked Loop with VCO 16-SOIC -40 to 85
256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 120 ns, PDIP28
256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 90 ns, PDIP28
High-Speed CMOS Logic Phase-Locked Loop with VCO 16-SO -40 to 85 32K X 8 OTPROM, 70 ns, PQCC32
256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 70 ns, PDIP28
256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 120 ns, PDSO28
256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 70 ns, PQCC32
256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 55 ns, PDIP28
High-Speed CMOS Logic Phase-Locked Loop with VCO 16-SO -40 to 85 32K X 8 OTPROM, 70 ns, PDIP28
High-Speed CMOS Logic Phase-Locked Loop with VCO 16-TVSOP -40 to 85
High-Speed CMOS Logic Phase-Locked Loop with VCO 16-TSSOP -40 to 85
8-Channel Analog Multiplexer/Demultiplexer 16-SSOP -40 to 85
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
http://
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| HN27C256G HN27C256G-17 HN27C256G-25 HN27C256G-20 |
256K (32K x 8-bit) UV EPROM, 200ns
256K (32K x 8-bit) UV EPROM, 250ns
32768-WORD x 8-BIT CMOS UV ERASABLE AND PROGRAMMABLE ROM
256K (32K x 8-bit) UV EPROM, 170ns
|
Hitachi Semiconductor
|
| LH52256CD-70LL |
CMOS 256K (32K x8) Static RAM(CMOS 256K (32K x8) 静态RAM)
|
Sharp Corporation
|
| KM616U4000C |
256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低电压CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IS61LV256-12J IS61LV256-12N IS61LV256-12T IS61LV25 |
32K x 8 LOW VOLTAGE CMOS STATIC RAM 32K X 8 STANDARD SRAM, 15 ns, PDSO28
32K x 8 LOW VOLTAGE CMOS STATIC RAM 32K X 8 STANDARD SRAM, 15 ns, PDIP28
32K x 8 LOW VOLTAGE CMOS STATIC RAM 32K X 8 STANDARD SRAM, 25 ns, PDSO28
|
Integrated Silicon Solu...
Integrated Silicon Solution Inc
ETC
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution, Inc.
|
| K6F4016R4E-EF85 K6F4016R4E-F K6F4016R4E-EF70 K6F40 |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IS62LV256L IS62LV256L-20JI IS62LV256L-20J IS62LV25 |
32K x 8 LOW VOLTAGE CMOS STATIC RAM 32K X 8 STANDARD SRAM, 20 ns, PDSO28
32K x 8 LOW VOLTAGE CMOS STATIC RAM 32K X 8 STANDARD SRAM, 25 ns, PDSO28
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
|
| IS62WV25616BLL-55BLI IS62WV25616BLL-55TLI IS62WV25 |
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM 256K X 16 STANDARD SRAM, 70 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
| HN58C257A HN58C256AFP10 HN58C256AP10 |
256 k EEPROM (32-kword ×8-bit)(256k EEPROM (32k×8)
IC-SM-256K CMOS EEPRM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
|
Hitachi,Ltd.
|
