PART |
Description |
Maker |
A28F400BR-B A28F400BR-T |
4-MBIT (512K x8) Boot Block Flash Memory(4兆位(512K x8) 引导块闪速存储器) 4-MBIT (256K x16) Boot Block Flash Memory(4兆位 (256K x16)引导块闪速存储器)
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Intel Corp.
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M36W432 M36W432B M36W432B70ZA1T M36W432B70ZA6T M36 |
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
M36W432-ZAT M36W432BZA M36W432T85ZA1T M36W432T85ZA |
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product 32 MBIT (2MB X16, BOOT BLOCK) FLASH MEMORY AND 4 MBIT (256K X16) SRAM, MULTIPLE MEMORY PRODUCT
|
ST Microelectronics
|
A28F400BR- A28F400BR-TB |
4-MBIT (256K X 16, 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 4-MBIT (256K X 16 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
|
INTEL[Intel Corporation]
|
CY7C1361C-133AXC CY7C1361C-133BGI CY7C1361C-133AJX |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 8.5 ns, PBGA119 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 8.5 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 9兆位56 × 36/512K × 18)流通过的SRAM 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 6.5 ns, PBGA165
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
M36W832TE70ZA1T M36W832TE85ZA1T M36W832TE-ZAT M36W |
SPECIALTY MEMORY CIRCUIT, PBGA66 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
|
SGS Thomson Microelectronics NUMONYX 意法半导 ST Microelectronics
|
CY14B104NA-ZSP20XCT CY14B104NA-ZSP20XIT CY14B104LA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|
E28F002BL-T150 28F200BL-TB PA28F200BL-T150 E28F200 |
2-MBIT (128K x 16/ 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K x 16 / 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K x 16, 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 256K X 8 FLASH 12V PROM, 150 ns, PDSO40
|
Intel Corporation Intel Corp. Intel, Corp.
|
M28W160ECT85N1T M28W160ECB85ZB1T M28W160ECB85N1T M |
16 Mbit (1Mb x16/ Boot Block) 3V Supply Flash Memory 16 Mbit (1Mbx16, Boot Block) 3V Supply Flash Memory 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory 16兆位兆x16插槽,引导块V电源快闪记忆
|
ST Microelectronics STMicroelectronics N.V. 意法半导
|
M29W160EB70N1 M29W160EB70N1T M29W160EB70N6 M29W160 |
16-Bit Edge-Triggered D-Type Flip-Flop With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 16兆位(含2Mb x8兆x16插槽,引导块3V电源快闪记忆 CAP 3300UF 6.3V ELECT FC RADIAL 16兆位(含2Mb x8兆x16插槽,引导块V电源快闪记忆 16 Mbit (2Mb x8 or 1Mb x16 / Boot Block) 3V Supply Flash Memory 16 MBIT (2MB X8 OR 1MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY 70ns; V(in/out): -0.6 to 0.6V; 16Mbit (2Mb x 8 or 1Mb x 16, boot block) 3V supply flash memory
|
STMicroelectronics N.V. ST Microelectronics SGS Thomson Microelectronics
|
M28W320CT M28W320CT100GB1T M28W320CT100GB6T M28W32 |
32 Mbit 2Mb x16/ Boot Block Low Voltage Flash Memory 32 Mbit 2Mb x16, Boot Block Low Voltage Flash Memory 32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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