| PART |
Description |
Maker |
| 2N604006 2N6042G 2N6040G 2N6043G 2N6045G 2N6040 2N |
Plastic Medium−Power Complementary Silicon Transistors
Plastic Medium?Power Complementary Silicon Transistors
|
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ONSEMI[ON Semiconductor]
|
| 2N6667 2N6666 2N6668 |
PLASTIC MEDIUM-POWER SILICON TRANSISTORS
|
BOCA[Boca Semiconductor Corporation]
|
| BD139 BD135G BD137 BD137G |
Plastic Medium Power Silicon NPN Transistor
|
Rectron Semiconductor
|
| MJE344-D |
Plastic NPN Silicon Medium-Power Transistor
|
ON Semiconductor
|
| TIP122 |
PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS
|
New Jersey Semi-Conduct...
|
| TIP120-D |
Plastic Medium-Power Complementary Silicon Transistors
|
ON Semiconductor
|
| BD180 BD180G |
Plastic Medium Power Silicon PNP Transistor
|
ON Semiconductor
|
| TIP100 TIP107 |
PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS
|
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| MJE344G MJE34406 |
Plastic NPN Silicon Medium?Power Transistor
|
ON Semiconductor
|
| BD679 BD675 |
Plastic Medium-Power Silicon NPN Darlingtons
|
New Jersey Semi-Conduct...
|
| CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
