| PART |
Description |
Maker |
| G70A |
16-point I/O Terminal Socket accepts Various Devices such as G2R Relays, Solid State Relays, and Timers for More System Flexibility.
|
Omron Electronics LLC
|
| MC1455P1G |
Timers Direct Replacement for NE555 Timers Adjustable Duty Cycle
|
ON Semiconductor
|
| C14-5-20-SERIES C4-5-20-SERIES C5-1-01-SERIES C8-1 |
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
8-bit MCU with Flash or ROM, 10-bit ADC, 5 timers, SPI, LINSCI", active CAN
Decade counter/divider
4X7W OR 2X22W CAR RADIO POWER AMPLIFIER PLUS TRIPLE POWER SUPPLY
Dual D type flip flop with preset and clear
DUAL 2-INPUT NAND BUFFER/DRIVER
MEMS motion sensor 3-axis - ± 2g/± 8g smart digital output "nano" accelerometer
LOW DROP POWER SCHOTTKY RECTIFIER
QUAD LOW-TO-HIGH VOLTAGE LEVEL SHIFTER
MEMS inertial sensor: 3-axis - ± 2g/± 6g linear accelerometer
4 bit D type latch
DUAL 64-STAGE STATIC SHIFT REGISTER
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
Single buffer
16-bit low voltage ROMless MCU
MEMS inertial sensor: 2-axis - /- 2g/6g ultracompact linear accelerometer
Turboswitch™ - ultra-fast high voltage diode
Single inverter (open drain)
DUAL MONOSTABLE MULTIVIBRATOR
14 stage binary counter
Very low drop voltage regulators with inhibit and dropout control flag
AC LINE SWITCH
Digital temperature sensor and thermal watchdog
MEMS inertial sensor: 3-axis - ± 2g/± 6g linear accelerometer 接口IC
ST7262 - LOW SPEED USB 8-BIT MCU WITH 3 ENDPOINTS, FLASH OR ROM MEMORY, LVD, WDG, 10-BIT ADC, 2 TIMERS, SCI, SPI 接口IC
8-BIT ADDRESSABLE LATCH
|
ON Semiconductor
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NANOSMDM100 |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
| NANOSMDM075F |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
| TSM600-250F-RA |
PolySwitch庐PTC Devices
PolySwitch?PTC Devices
|
Tyco Electronics
|
| TS250-130F-RC-B-0.5-2 |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
| TRF600-150-B-0.5 TRF600-150-B-0.5-2 |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
| NANOSMDC075F |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
|
