PART |
Description |
Maker |
CXK77B1841AGB CXK77B3641AGB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速同步SRAM28K的x 36Bit)(4分位,写延迟LVTTL高速同步静态随机存储器28K的36位) 4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、写延迟、高速逻辑收发(HSTL)、高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速(128K的x 36Bit)(4分位,写延迟,高速逻辑收发(HSTL),高速同步静态随机存储器28K的36位)同步静态存储器
|
Sony, Corp.
|
MCM69R819AZP8R MCM69R819AZP5 MCM69R819AZP6 MCM69R8 |
MCM69R737A/D 4M Late Write LVTTL ER 14C 12#16 2#4 SKT PLUG 256K X 18 LATE-WRITE SRAM, 2.5 ns, PBGA119 4M Late Write LVTTL 256K X 18 LATE-WRITE SRAM, 3 ns, PBGA119 4M Late Write LVTTL 256K X 18 LATE-WRITE SRAM, 3.5 ns, PBGA119
|
Motorola, Inc Motorola Mobility Holdings, Inc.
|
CXK77B1840AGB CXK77B3640AGB |
4Mb Late Write HSTL High Speed Synchronous SRAMs (128K x 36 or 256K x 18 Organization) From old datasheet system
|
Sony
|
GS8330LW72C-200 GS8330LW36C-250I GS8330LW36C-200 G |
36Mb x1Lp CMOS I/O Late Write SigmaRAM 512K X 72 LATE-WRITE SRAM, 2.1 ns, PBGA209 36Mb Σ1x1Lp CMOS I/O Late Write SigmaRAM
|
GSI Technology, Inc.
|
HM64YLB36514BP-6H HM64YLB36514 |
16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit, Register-Latch Mode) 16M Synchronous Late Write Fast Static RAM (512-kword 】 36-bit, Register-Latch Mode) Memory>Fast SRAM>Late Write / High Speed Interface Synchronous SRAM
|
Renesas Electronics Corporation
|
MCM69R736AZP5 MCM69R736AZP5R MCM69R736AZP8 MCM69R7 |
4M Late Write HSTL 128K X 36 LATE-WRITE SRAM, 4 ns, PBGA119 Circular Connector; No. of Contacts:22; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:36; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:36-1 RoHS Compliant: No
|
Motorola, Inc. Motorola Mobility Holdings, Inc. MOTOROLA INC
|
GS8170DW36C GS8170DW36C-200 GS8170DW36C-250 GS8170 |
18Mb B>1x1Dp CMOS I/O Double Late Write SigmaRAM 18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 256K X 72 STANDARD SRAM, 2.25 ns, PBGA209
|
GSI Technology, Inc.
|
K7P323688M-HC250 K7P323688M-GC250 |
1M X 36 LATE-WRITE SRAM, 2 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119 1M X 36 LATE-WRITE SRAM, 2 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANCE, BGA-119
|
TOKO, Inc.
|
HM62G36256ABP-30 HM62G36256ABP-33 |
Memory>Fast SRAM>Late Write / High Speed Interface Synchronous SRAM
|
Renesas
|
BAS516 |
High Spee d Switching Diode
|
Chendahang Electronics ...
|
MCM63L836A |
8M Late Write HSTL From old datasheet system
|
Motorola
|