PART |
Description |
Maker |
LNA2603F 0847 LN155 LNA2603FLN155 |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes Infrared Light Emitting Diodes From old datasheet system GaAs Infrared Light Emitting Diode
|
Panasonic Corporation Matsshita / Panasonic PANASONIC[Panasonic Semiconductor]
|
LNA2802L |
GaAs Infrared Light Emitting Diode Infrared Light Emitting Diodes
|
PANASONIC[Panasonic Semiconductor] Matsshita / Panasonic
|
SIM-20ST |
Sensors > Infrared Light Emitting Diodes Infrared light emitting diode/ side-view type Infrared Light Emitting Diode, Side-view Type(红外光发射二极管)
|
Rohm CO.,LTD.
|
LNA2601L |
Infrared Light Emitting Diodes
|
Matsshita / Panasonic
|
LN58 |
Infrared Light Emitting Diodes
|
Matsshita / Panasonic
|
LN78 |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
|
Panasonic
|
LNA2W01L |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
|
Panasonic
|
MIE-524H4 524H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极 Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd. UOT[Unity Opto Technology]
|
MIE-534H4 534H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极 Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd. UOT[Unity Opto Technology]
|
VSMY2853G VSMY2853RG |
High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology Miniature light barrier
|
Vishay Siliconix
|
IS3H4 |
The IS3H4 is an optically coupled isolator consisting of two infrared light emitting diodes in inverse parallel and an NPN silicon photo transistor.
|
ISOCOM COMPONENTS
|