| PART |
Description |
Maker |
| IRL3102 IRL3102L |
Advanced Process Technology
HEXFET? Power MOSFET
Power MOSFET(Vdss=20V, Rds(on)=0.013ohm, Id=61A)
|
IRF[International Rectifier]
|
| IRFM220A |
N-Channel Power MOSFET(N娌??澧?己?????OS?烘?搴??锛??婧????负200V锛??????讳负0.8惟锛???垫?涓?.13A锛?
Advanced Power MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| IRL640A |
Power MOSFET - BVdss=200V Rds(on)=0.18 ohn Id = 18A
Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRF7342QPBF10 IRF7342QTRPBF |
HEXFET庐 Power MOSFET
HEXFET? Power MOSFET
Advanced Process Technology
|
International Rectifier
|
| IRF7105PBF IRF7105TRPBF |
Advanced Process Technology
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
|
International Rectifier
|
| IRFI1010NPBF IRFI1010NPBF-15 |
ADVANCED PROCESS TECHNOLOGY
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
|
International Rectifier
|
| SFW9530 SFI9530 |
Advanced Power MOSFET 10.5 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRFRU220A IRFR_U220A IRFR220A IRFU220A IRFR/U220A |
4.6 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
ADVANCED POWER MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| IRF610A |
Advanced Power MOSFET
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为200V，导通电阻为1.5Ω，漏电流.3A 3.3 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| IRLWI610A |
Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
