PART |
Description |
Maker |
RJK4512DPE-00-J3 RJK4512DPE |
Silicon N Channel MOS FET High Speed Power Switc
|
Renesas Electronics Corporation. RENESAS[Renesas Electronics Corporation]
|
MSK130 |
ULTRA HIGH VOLTAGE HIGH SPEED DIFFERENTIAL OP-AMP Ultra High Voltage High Speed Differential Operational Amplifier(FET输入,超高电压高速差分运算放大器)
|
List of Unclassifed Manufacturers M.S. Kennedy Corporation
|
2SA1871 2SA1871-GA1-AZ |
PNP SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING 进步党三重扩散硅晶体管高速高压开 1 A, 600 V, PNP, Si, POWER TRANSISTOR High-speed high-voltage switching PNP 3-diffusion trans
|
NEC, Corp. NXP Semiconductors N.V. NEC[NEC]
|
HCPL-901J HCPL-900J HCPL-9031 HCPL-902J HCPL-9030 |
SPECIAL HCPL-0931 · High Speed Digital Isolator HCPL-0930 · High Speed Digital Isolator HCPL-092J · High Speed Digital Isolator HCPL-091J · High Speed Digital Isolator HCPL-090J · High Speed Digital Isolator HCPL-0900 · High Speed Digital Isolator HCPL-9000 · High Speed Digital Isolator HCPL-9030 · High Speed Digital Isolator HCPL-902J · High Speed Digital Isolator HCPL-9031 · High Speed Digital Isolator HCPL-900J · High Speed Digital Isolator HCPL-901J · High Speed Digital Isolator
|
Agilent (Hewlett-Packard)
|
KTC4527 |
TRIPLE DIFFUSED NPN TRANSISTOR (HIGH VOLTAGE AND HIGH RELLABILITY HIGH SPEED SWITCHING, WIDE SOA)
|
KEC Holdings KEC[KEC(Korea Electronics)]
|
AUIRS2112S |
The AUIRS2112S is a high voltage, high speed power MOSFET and IGBT driver with independent high- and lowside referenced output channels.
|
International Rectifier
|
2SC3632-Z |
High voltage VCEO=600V High speed tf 0.5ìs Collector to base voltage VCBO 600 V
|
TY Semiconductor Co., Ltd
|
KTC4527 KTC4527F |
TRIPLE DIFFUSED NPN TRANSISTOR (HIGH VOLTAGE AND HIGH RELLABILITY HIGH SPEED SWITCHING, WIDE SOA) 三重扩散NPN晶体管(高电压和RELLABILITY高速开关,级SOA TRIPLE DIFFUSED NPN TRANSISTOR (HIGH VOLTAGE AND HIGH RELLABILITY HIGH SPEED SWITCHING/ WIDE SOA)
|
KEC Holdings KEC[KEC(Korea Electronics)]
|
BUX33B BUX33A |
HIGH VOLTAGE HIGH SPEED HIGH POWER TRANSISTORS
|
Semelab
|
IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us. High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
MJE13003 13003BR |
GT 37C 37#16 SKT RECP 三重扩散NPN晶体管(开关稳压器,高压和高速开关) TRIPLE DIFFUSED NPN TRANSISTOR(SWITCHING REGULATOR / HIGH VOLTAGE AND HIGH SPEED SWITCHING) TRIPLE DIFFUSED NPN TRANSISTOR(SWITCHING REGULATOR, HIGH VOLTAGE AND HIGH SPEED SWITCHING)
|
KEC(Korea) KEC Holdings KEC[KEC(Korea Electronics)]
|