| PART |
Description |
Maker |
| 2SD1760 2SD1864 2SD1864P 2SD1760Q |
Power Transistor 50V, 3A 功率晶体0VA
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 3A I(C) | TO-252 晶体管|晶体管|叩| 50V五（巴西）总裁| 3A条一（c）|52
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 3A I(C) | SIP
|
Rohm Co., Ltd.
Rohm CO.,LTD.
ROHM[Rohm]
|
| 2DC2412R-7 2DC2412R |
50V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
|
Vishay Siliconix
Diodes
|
| 2SB1143 2SD1683 2SB1143S |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 4A I(C) | TO-126
50V/4A Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SB1566 A5800383 |
Power Transistor (-50V, -3A) 功率晶体管（- 50V的三号甲
Power Transistor (-50V/ -3A)
From old datasheet system
|
Rohm Co., Ltd.
|
| RA110C RC110C RA113S RC113S RA103S RC103S RA114S R |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-236
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-92VAR 晶体管| 50V五（巴西）总裁| 100mA的一（c）|2VAR
|
Amphenol, Corp.
|
| 2SB1443 2SA1797 A5800341 2SC4672T100P 2SC4672T100Q |
Power Transistor (-50V/ -2A)
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
From old datasheet system
Power Transistor (-50V, -2A)
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 2A I(C) | TO-243
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 2A I(C) | SIP
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 50V五（巴西）总裁|甲一（c）|43
|
Rohm Co., Ltd.
|
| 2SB1184 2SB1243 2SB1243R 2SB1243Q 2SB1184P |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-252AA 晶体管|晶体管|进步党| 50V五（巴西）总裁| 3A条一（c）|52AA
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | SIP
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
HIROSE ELECTRIC Co., Ltd.
ROHM
|
| 2SD2395 |
Power Transistor (-50V/ -3A)
Power Transistor (-50V -3A)
For Power Amplification (50V, 3A)
|
ROHM[Rohm]
|
| 4608H-701-332/472 4608H-701-332/272 4608H-701-332/ |
RC NETWORK, BUSSED, 3300ohm, 50V, 0.0047uF, THROUGH HOLE MOUNT, SIP-8 SIP
RC NETWORK, BUSSED, 3300ohm, 50V, 0.0027uF, THROUGH HOLE MOUNT, SIP-8 SIP
RC NETWORK, BUSSED, 3300ohm, 50V, 0.047uF, THROUGH HOLE MOUNT, SIP-8 SIP
RC NETWORK, BUSSED, 3300ohm, 50V, 0.000047uF, THROUGH HOLE MOUNT, SIP-8 SIP
RC NETWORK, BUSSED, 3300ohm, 50V, 0.00047uF, THROUGH HOLE MOUNT, SIP-8 SIP
RC NETWORK, BUSSED, 100000ohm, 50V, 0.015uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 82ohm, 50V, 0.00012uF, THROUGH HOLE MOUNT, SIP-10
RC NETWORK, BUSSED, 82ohm, 50V, 0.00022uF, THROUGH HOLE MOUNT, SIP-10
RC NETWORK, BUSSED, 390000ohm, 50V, 0.027uF, THROUGH HOLE MOUNT, SIP-10
RC NETWORK, BUSSED, 1500ohm, 50V, 0.015uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 10000ohm, 50V, 0.015uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 330ohm, 50V, 0.0001uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 100ohm, 50V, 0.0047uF, THROUGH HOLE MOUNT, SIP-10
RC NETWORK, BUSSED, 33ohm, 50V, 0.000047uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 1200ohm, 50V, 0.047uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 33ohm, 50V, 0.00047uF, THROUGH HOLE MOUNT, SIP-9
Thick Film Resistor Network; Series:4600X; Resistance:22ohm; Resistance Tolerance: 5, - 20%; Power Rating:1.13W; Operating Temperature Range:-55 C to ? C; Resistor Element Material:Thick Film; Voltage Rating:100VDC RoHS Compliant: No
RC NETWORK, BUSSED, 100000ohm, 50V, 0.0039uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 33000ohm, 50V, 0.001uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 15000ohm, 50V, 0.00068uF, THROUGH HOLE MOUNT, SIP-9
RC NETWORK, BUSSED, 15000ohm, 50V, 0.00033uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 100000ohm, 50V, 0.033uF, THROUGH HOLE MOUNT, SIP-9
RC NETWORK, BUSSED, 330ohm, 50V, 0.00033uF, THROUGH HOLE MOUNT, SIP-9
|
Bourns, Inc.
BOURNS INC
|
| CSB1065 CSB1065N CSB1065R CSB1065P CSB1065Q |
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 390 hFE. Complementary CSD1506
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 120 hFE. Complementary CSD1506N
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 180 - 390 hFE. Complementary CSD1506R
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 82 - 180 hFE. Complementary CSD1506P
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 120 - 270 hFE. Complementary CSD1506Q
|
Continental Device India Limited
|
| DTA123YCAHZG DTA123YCAHZGT116 |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
|
ROHM
|
| 2SC3623-T 2SC3623-T/JM 2SC3623A-T 2SC3623A-T/JM 2S |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SPAK
Silicon transistor
|
NEC
|
|
