| PART |
Description |
Maker |
| CGH35060F1-AMP |
60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access
|
Cree, Inc
|
| NPT1012 NPT1012-15 |
Gallium Nitride 28V, 25W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| MGFK44A404511 |
14.0-14.5 GHz BAND / 25W
|
Mitsubishi Electric Semiconductor
|
| HMMC-5027 |
2 -26.5 GHz Broadband Traveling Wave Amplifier(2 -26.5 GHz 宽频行波放大器（用于中等功率
|
Agilent(Hewlett-Packard)
|
| NPT2019 |
Gallium Nitride 48V, 25W, DC-6 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
|
| D1053 D1053UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(50W-28V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应50W-28V-1GHz,推挽) 金镀金属多功能硅的DMOS射频场效应管50 28V 1GHz的，推挽式）（镀金多用的DMOS射频硅场效应管（50 28V 1GHz的，推挽式）
METAL GATE RF SILICON FET
|
3M Company
SEME-LAB[Seme LAB]
|
| ABA-31563-TR2G ABA-31563 ABA-31563-BLKG ABA-31563- |
ABA-31563 · Low Cost Broadband Silicon RFIC Amplifier
3.5 GHz Broadband Silicon RFIC Amplifier
GT 3C 3#16S SKT PLUG
|
http://
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| T2G6003028-FS-EVB1 T2G6003028-FS-15 T2G6003028-FS- |
30W, 28V DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| T2G6003028-FL T2G6003028-FL-15 T2G6003028-FL-EVB2 |
30W, 28V DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| T2G6000528-Q3-15 T2G6000528-Q3-EVB5 T2G6000528-Q3- |
10W, 28V DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| ERA-4XSM |
Surface Mount Monolithic Amplifier 50? Broadband, DC to 4 GHz
Surface Mount Monolithic Amplifier 50з, Broadband, DC to 4 GHz
|
MINI[Mini-Circuits]
|
| CGH27030F-AMP CGH27030F-TB |
30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
|
Cree, Inc
|
