| PART |
Description |
Maker |
| LD267 |
GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays
|
Siemens Semiconductor G...
|
| SFH4205 Q62702-P5165 Q62702-P978 SFH4200 |
Schnelle GaAs-IR-Lumineszenzdiode (950 nm),High-Speed GaAs Infrared Emitter (950 nm)
High-Speed GaAs Infrared Emitter (950...
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| SFH415 SFH415-U SFH416-R |
GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters
|
Siemens Semiconductor G...
|
| TSKS5400-FSZ TSKS540008 TSKS5400 |
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
|
Vishay Siliconix
|
| LH-FSLH-S090C-0406A FSLH-S090C |
850 MHz - 950 MHz RF/MICROWAVE SPLITTER AND COMBINER, 1 dB INSERTION LOSS
2012 Size 850/950 MHz Chip Multilayer Splitter/Combiner
|
HITACHI METALS LTD
HIROSE[Hirose Electric]
Hirose Electric USA, INC.
|
| STP5N95K3 STU5N95K3 STD5N95K3 STF5N95K3 |
N-channel 950 V, 3 Ohm, 4 A Zener-protected SuperMESH3(TM) Power MOSFET in IPAK package
N-channel 950 V, 3 ohm typ, 4 A Zener-protected SuperMESH3
|
ST Microelectronics
STMicroelectronics
|
| Q62703-Q1547 Q62703-Q1093 SFH484_5 Q62703-Q1092 SF |
From old datasheet system
GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters 880 nm 镓铝砷红外光Lumineszenzdioden 880纳米镓铝砷红外辐射器880纳米
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| FP12-950 |
FP12-950
|
TRIAD MAGNETICS
|
| ZABT-2R15G |
Bias -Tee / Diplexer 50Ω 10 to 2150MHz (10MHz, 950-2150MHz)
Bias -Tee / Diplexer 50楼? 10 to 2150MHz (10MHz, 950-2150MHz)
|
Mini-Circuits
|
| STP7N95K3 STW7N95K3 |
N-channel 950 V, 1.1 Ohm, 7.2 A, TO-247, Zener-protected SuperMESH3; Power MOSFET
N-channel 950 V, 1.1 Ohm, 7.2 A, TO-220, TO-220FP, TO-247 Zener-protected SuperMESH3 Power MOSFET
|
ST Microelectronics
STMicroelectronics
|
