| PART |
Description |
Maker |
| RJK4512DPE-00-J3 RJK4512DPE |
Silicon N Channel MOS FET High Speed Power Switc
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| 2N6496 2N5039 2N5038 |
HIGH-CURRENT, HIGH-POWER HIGH-SPEED SILICON N-P-N PLANAR TRANSISTORS
|
GESS[GE Solid State]
|
| MAX5889 MAX5890 MAX5891 MAX5891EGK |
16-Bit, 600Msps, High-Dynamic-Performance DAC with LVDS Inputs
Dual Very-High Speed, High-Current Peripheral Drivers 8-CDIP -55 to 125
|
MAXIM - Dallas Semiconductor
Maxim Integrated Products, Inc.
|
| 2N3725 |
HIGH VOLTAGE, HIGH CURRENT, HIGH SPEED, NPN SWITCHING
|
Seme LAB
|
| 2N6032 2N6033 |
HIGH CURRENT HIGH SPEED HIGH POWER TRANSISTORS
|
ETC
GESS[GE Solid State]
|
| TLE4976L TLE4976-L |
High Precision Unipolar Hall IC Switc...
High Precision Hall-Effect Switch
|
INFINEON[Infineon Technologies AG]
|
| 2SK1365 E001341 K1365 |
FET, Silicon N Channel MOS Type(for High Speed, High Current Switching, Switching Power Supply)
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS SWITCHING POWER SUPPLY APPLICATIONS
From old datasheet system
FET/ Silicon N Channel MOS Type(for High Speed/ High Current Switching/ Switching Power Supply)
|
Toshiba Corporation
Toshiba Semiconductor
|
| MIC5190BML MIC5190BMM MIC519005 MIC5190YML MIC5190 |
Ultra High-Speed, High-Current Active Filter/LDO Controller
|
Micrel Semiconductor
|
| PD8931 PD8001 |
High quantum effciency, Very small dark current, High speed response
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| GCA200BA60 |
IGBT MODULE(designed for high speed, high current switching applications)
|
List of Unclassifed Manufacturers
ETC[ETC]
|
