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2SD1458 - Transistor

2SD1458_281352.PDF Datasheet

Part No.

2SD1458

Description

Transistor

File Size

46.50K / 3 Page

Maker

Matsshita / Panasonic

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Part: 2SD1450

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PART	Description	Maker
2N538 2N522 2N941 2N586 2N502A 2N795 2N738 2N779 2	5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR \| BJT \| PNP \| 8V V(BR)CEO \| TO-5 TRANSISTOR \| BJT \| PNP \| 8V V(BR)CEO \| 50MA I(C) \| TO-18 TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| TO-9 TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| TO-9 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 50MA I(C) \| TO-18 TRANSISTOR \| BJT \| PNP \| 15V V(BR)CEO \| 100MA I(C) \| TO-18 TRANSISTOR \| BJT \| PNP \| 15V V(BR)CEO \| 200MA I(C) \| TO-18 TRANSISTOR \| BJT \| PNP \| 12V V(BR)CEO \| 100MA I(C) \| TO-18 TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 100MA I(C) \| TO-18 TRANSISTOR \| BJT \| NPN \| 15V V(BR)CEO \| 100MA I(C) \| TO-18 TRANSISTOR \| BJT \| PNP \| 16V V(BR)CEO \| 1A I(C) \| TO-5 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 50MA I(C) \| TO-18 TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| TO-18 晶体管\|晶体管\|叩\| 50V五（巴西）总裁\|8 TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 500MA I(C) \| TO-5 晶体管\|晶体管\|进步党\| 30V的五（巴西）总裁\| 500mA的一（c）\|	Central Semiconductor, Corp. Microsemi, Corp.
GA1A4Z GA1A4Z-T2 GA1A4ZL69-T1	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SOT-323 晶体管\| 50V五（巴西）总裁\| 100mA的一（c）\|的SOT - 323 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR SUPER MINIMOLD PACKAGE-3 MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR Hybrid transistor	NEC, Corp.
2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472	-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor High-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier Transistor (120V, 50mA) High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier Transistor (32V , 0.3A) Medium Power Transistor (32V, 1A) Power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET	UTC ROHM[Rohm]
FA1F4Z FA1F4ZL65 FA1F4Z-L FA1F4Z-T2B	Compound transistor MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD TRANSISTOR \| 60V V(BR)CEO \| 100MA I(C) \| SOT-346	NEC Corp.
2N2369AU 2N2369AUA 2N2369AUB 2N4449 2N4449UA 2N444	NPN SILICON SWITCHING TRANSISTOR 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AB NPN BIPOLAR TRANSISTOR NPN Transistor	Microsemi, Corp. MICROSEMI[Microsemi Corporation]
151-05 151-08 151-07 151-09 152-05 164-18 164-04 1	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 70V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 90V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 180V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 6A I(C) \| TO-82 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 220V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 90V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 140V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 70V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 90V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 200V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 240V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 10A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 240V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 180V V(BR)CEO \| 6A I(C) \| TO-82 晶体管\|晶体管\|叩\| 100V的五（巴西）总裁\|甲一c）\| STR-5/16 晶体管\|晶体管\|叩\| 180V五（巴西）总裁\|甲一c）\| STR-5/16 晶体管\|晶体管\| npn型\| 140伏特五（巴西）总裁\|甲一c）\| STR-5/16 晶体管\|晶体管\|叩\| 50V五（巴西）总裁\| 6A条一c）\|2 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 7.5A I(C) \| STR-1/4 晶体管\|晶体管\|叩\| 100V的五（巴西）总裁\| 7.5AI（丙）\|个STR - 1 / 4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 20A I(C) \| STR-5/16 晶体管\|晶体管\|叩\| 60V的五（巴西）总裁\|甲一c）\| STR-5/16 TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 20A I(C) \| STR-5/16 晶体管\|晶体管\|叩\| 50V五（巴西）总裁\|甲一（c）\| STR-5/16 TRANSISTOR \| BJT \| NPN \| 70V V(BR)CEO \| 20A I(C) \| STR-5/16 晶体管\|晶体管\|叩\| 70V的五（巴西）总裁\|甲一（c）\| STR-5/16	Samsung Semiconductor Co., Ltd. Molex, Inc. Intel, Corp.
BFP620E7764	RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in SOT343 Package C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR	Infineon Technologies AG
MC79L0006 MMBT5551-A-AE3-E-R MMBT5551-X-AE3-6-R MM	PNP EXPITAXIAL PLANAR TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR	友顺科技股份有限公司 UTC[Unisonic Technologies]
FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 1A I(C) \| SOT-89 TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 1A I(C) \| SOT-89 TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 2A I(C) \| SO TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 2A I(C) \| SO TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 500MA I(C) \| SO TRANSISTOR \| BJT \| NPN \| 150V V(BR)CEO \| 1A I(C) \| SO 晶体管\|晶体管\| npn型\| 150伏五（巴西）总裁\| 1A条一（c）\| TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 2A I(C) \| SO 晶体管\|晶体管\|进步党\| 100V的五（巴西）总裁\|甲一（c）\| TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 1A I(C) \| SOT-89 晶体管\|晶体管\|进步党\| 60V的五（巴西）总裁\| 1A条一（c）\|采用SOT - 89 TRANSISTOR \| BJT \| NPN \| 45V V(BR)CEO \| 1A I(C) \| SO 晶体管\|晶体管\|叩\| 45V的五（巴西）总裁\| 1A条一（c）\| TRANSISTOR \| BJT \| NPN \| 30V V(BR)CEO \| 400MA I(C) \| SO 晶体管\|晶体管\|叩\| 30V的五（巴西）总裁\| 400mA的一（c）\| TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 1A I(C) \| SOT-89	Zetex Semiconductor PLC Fujitsu, Ltd. Bourns, Inc. Amphenol, Corp.
GN1A4Z GN1A4Z-T2 GN1A4Z-T1 GN1A4ZM67	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SOT-323 晶体管\| 50V五（巴西）总裁\| 100mA的一（c）\|的SOT - 323 MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR Hybrid transistor	NEC, Corp.
IPP100N04S2-04 IPB100N04S2-04 SP0002-19061 SP0002-	OptiMOSPower-Transistor 的OptiMOS㈢功率晶体管 OptiMOS? Power-Transistor OptiMOS㈢ Power-Transistor 100 A, 40 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB GREEN, PLASTIC, TO-220, 3 PIN	Infineon Technologies AG

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