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2SD1010 - Transistor

2SD1010_283483.PDF Datasheet

Part No.

2SD1010

Description

Transistor

File Size

47.04K / 3 Page

Maker

Matsshita / Panasonic

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Part: 2SD1015

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PART	Description	Maker
154-22 153-28 154-18 154-04 154-10 154-14 154-12 1	TRANSISTOR \| BJT \| NPN \| 220V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 180V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 140V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 260V V(BR)CEO \| 7.5A I(C) TRANSISTOR \| BJT \| NPN \| 200V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 7.5A I(C) TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 240V V(BR)CEO \| 7.5A I(C) TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 7.5A I(C) \| STR-1/4 晶体管\|晶体管\|叩\| 40V的五（巴西）总裁\| 7.5AI（丙）\|个STR - 1 / 4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 7.5A I(C) \| STR-1/4 晶体管\|晶体管\|叩\| 60V的五（巴西）总裁\| 7.5AI（丙）\|个STR - 1 / 4 TRANSISTOR \| BJT \| NPN \| 280V V(BR)CEO \| 7.5A I(C) 晶体管\|晶体管\| npn型\| 280伏特五（巴西）总裁\| 7.5AI（丙	NXP Semiconductors N.V. Bel Fuse, Inc. YEONHO Electronics Co., Ltd.
Q67060-S7432 P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 P	Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, LL SIPMOS垄莽 Power-Transistor SIPMOS庐 Power-Transistor SIPMOS? Power-Transistor SIPMOS㈢ Power-Transistor	Infineon Technologies AG
2N1122 2N1405 2N1407 2N1101 2N1140 2N1535 2N1472 2	TRANSISTOR \| BJT \| PNP \| 11V V(BR)CEO \| 50MA I(C) \| TO-24 TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 50MA I(C) \| TO-12 TRANSISTOR \| BJT \| NPN \| 15V V(BR)CEO \| 100MA I(C) \| TO-22 TRANSISTOR \| BJT \| PNP \| 45V V(BR)CEO \| 5A I(C) \| TO-3 TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 100MA I(C) \| TO-9 TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 3.5A I(C) \| IST-3RT-1/2 TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 50MA I(C) \| TO-5 TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 50A I(C) \| TO-36 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR \| BJT \| NPN \| 150V V(BR)CEO \| 7.5A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 250V V(BR)CEO \| 7.5A I(C) \| TO-82 TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 12A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 110V V(BR)CEO \| TO-5 TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 50MA I(C) \| TO-5 TRANSISTOR \| BJT \| PNP \| 35V V(BR)CEO \| 100MA I(C) \| TO-5 TRANSISTOR \| BJT \| NPN \| 25MA I(C) \| TO-22VAR TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 5A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 25A I(C) \| TO-36 TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 5A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 5A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 5A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 90V V(BR)CEO \| 5A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 7A I(C) \| TO-3 晶体管\|晶体管\|进步党\| 50V五（巴西）总裁\| 7A条一（c）\| 5-Pin, Multiple-Input, Programmable Reset ICs 晶体管\|晶体管\|进步党\| 12V的五（巴西）总裁\| 100mA的一（c）\| 5-Pin, Multiple-Input, Programmable Reset ICs 晶体管\|晶体管\|进步党\| 65V的五（巴西）总裁\|5A一（c）\|6 TRANSISTOR \| BJT \| PNP \| 15A I(C) \| TO-36 TRANSISTOR \| BJT \| PNP \| 38V V(BR)CEO \| 15A I(C) \| TO-41	NXP Semiconductors N.V. Microsemi, Corp.
2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472	-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor High-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier Transistor (120V, 50mA) High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier Transistor (32V , 0.3A) Medium Power Transistor (32V, 1A) Power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET	UTC ROHM[Rohm]
50N06-TA3-T 50N06-TF3-T 2SA102005 2SA1797-X-AA3-R	SILICON PNP EPITAXIAL TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR 进步党硅外延晶体 REVERSIBLE MOTOR DRIVER NPN EPITAXIAL PLANAR TRANSISTOR HIGH CURRENT SWITCHIG APPLICATIONS HIGH CURRENT SWITCHING APPLICATIONS HIGH VOLTAGE NPN TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR NPN SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING (6V, 50mA) HIGH-FREQUENCY AMPLIFIER TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR SILICON PNP TRANSISTOR LOW FREQUENCY PNP TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR MEDIUM POWER TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR 50 Amps, 60 Volts N-CHANNEL POWER MOSFET	UNISONIC TECHNOLOGIES CO LTD ??『绉???′唤?????? Unisonic Technologies Co., Ltd. 友顺科技股份有限公司 UTC[Unisonic Technologies]
151-05 151-08 151-07 151-09 152-05 164-18 164-04 1	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 70V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 90V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 180V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 6A I(C) \| TO-82 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 220V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 90V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 140V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 70V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 90V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 200V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 240V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 10A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 240V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 180V V(BR)CEO \| 6A I(C) \| TO-82 晶体管\|晶体管\|叩\| 100V的五（巴西）总裁\|甲一c）\| STR-5/16 晶体管\|晶体管\|叩\| 180V五（巴西）总裁\|甲一c）\| STR-5/16 晶体管\|晶体管\| npn型\| 140伏特五（巴西）总裁\|甲一c）\| STR-5/16 晶体管\|晶体管\|叩\| 50V五（巴西）总裁\| 6A条一c）\|2 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 7.5A I(C) \| STR-1/4 晶体管\|晶体管\|叩\| 100V的五（巴西）总裁\| 7.5AI（丙）\|个STR - 1 / 4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 20A I(C) \| STR-5/16 晶体管\|晶体管\|叩\| 60V的五（巴西）总裁\|甲一c）\| STR-5/16 TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 20A I(C) \| STR-5/16 晶体管\|晶体管\|叩\| 50V五（巴西）总裁\|甲一（c）\| STR-5/16 TRANSISTOR \| BJT \| NPN \| 70V V(BR)CEO \| 20A I(C) \| STR-5/16 晶体管\|晶体管\|叩\| 70V的五（巴西）总裁\|甲一（c）\| STR-5/16	Samsung Semiconductor Co., Ltd. Molex, Inc. Intel, Corp.
2SA20881 2SB11321 2SB11841 2SB1198K1 2SB12601 2SB1	Medium power transistor (?60V, ?0.5A) Medium Power Transistor (?32V,?1A) Power Transistor (?60V, ?3A) Low-frequency Transistor (-80V, -0.5A) Power Transistor (?80V, ?1A) Low VCE(sat) Transistor (?20V, ?3A) Power transistor (?20V, ?2A) General purpose amplification (?30V, ?1A) Low frequency amplifier Medium power transistor (−60V, −0.5A)	ROHM[Rohm]
2N2904 JANTX2N2905A JAN2N2904 JAN2N2905 2N2904A 2N	600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 PNP Transistor PNP SWITCHING SILICON TRANSISTOR 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 3 Pin 1.5A Fixed 12V Positive Voltage Regulator 3-TO-220 0 to 125 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD	MICROSEMI CORP-LAWRENCE http:// MICROSEMI[Microsemi Corporation] Microsemi, Corp.
CP705	Chip Form: SILICON TRANSISTOR Small Signal Transistor PNP - High Current Transistor Chip	Central Semiconductor Corp
FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 1A I(C) \| SOT-89 TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 1A I(C) \| SOT-89 TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 2A I(C) \| SO TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 2A I(C) \| SO TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 500MA I(C) \| SO TRANSISTOR \| BJT \| NPN \| 150V V(BR)CEO \| 1A I(C) \| SO 晶体管\|晶体管\| npn型\| 150伏五（巴西）总裁\| 1A条一（c）\| TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 2A I(C) \| SO 晶体管\|晶体管\|进步党\| 100V的五（巴西）总裁\|甲一（c）\| TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 1A I(C) \| SOT-89 晶体管\|晶体管\|进步党\| 60V的五（巴西）总裁\| 1A条一（c）\|采用SOT - 89 TRANSISTOR \| BJT \| NPN \| 45V V(BR)CEO \| 1A I(C) \| SO 晶体管\|晶体管\|叩\| 45V的五（巴西）总裁\| 1A条一（c）\| TRANSISTOR \| BJT \| NPN \| 30V V(BR)CEO \| 400MA I(C) \| SO 晶体管\|晶体管\|叩\| 30V的五（巴西）总裁\| 400mA的一（c）\| TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 1A I(C) \| SOT-89	Zetex Semiconductor PLC Fujitsu, Ltd. Bourns, Inc. Amphenol, Corp.
2SA1708S-AN EN3094B 2SC4488T-AN 2SC4488S-AN	Bipolar Transistor Bipolar Transistor Adoption of FBET, MBIT processes Bipolar Transistor ?0V, ?A, Low VCE(sat) PNP Single PCP	ON Semiconductor
CP616	Small Signal Transistor PNP - Silicon RF Transistor Chip Chip Form: RF TRANSISTOR	Central Semiconductor Corp

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