| PART |
Description |
Maker |
| 2SC311303 2SC3113 |
Transistor Silicon NPN Epitaxial Type For Audio Amplifier and Switching Applications
|
Toshiba Semiconductor
|
| HN1B04FU HN1B04FUGR |
TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 150MA I(C) | TSOP
Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
TOSHIBA
|
| 2SC537607 2SC5376 |
Silicon NPN Epitaxial Type Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| HN1B01FU E001968 |
From old datasheet system
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| HN2C01FU E001987 |
From old datasheet system
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC342106 2SC3421 |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC2120 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Power Amplifier Applications
|
TOSHIBA
|
| HN1B04F07 HN1B04F |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC3421 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| 2SC4207 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications
|
TOSHIBA
|
| HN1C01FU |
Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
TOSHIBA
|
