| PART |
Description |
Maker |
| PMB2400 Q67000-A6024 |
GSM RECEIVER CIRCUIT
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Q67006-A6072 PMB2402 Q67000-A6072 PMB2402-S |
GSM RECEIVER CIRCUIT
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| AD6459 AD6459ARS |
GSM 3 V Receiver IF Subsystem
|
AD[Analog Devices]
|
| MRF18085ALSR3 MRF18085AR3 MRF18085A |
GSM/GSM EDGE, 1.8-1.88 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| MRF5S9080NBR1 |
GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
|
Freescale Semiconductor
|
| GSA8821B301721 |
I-Bar Penta-band GSM Antenna Works with GSM / CDMA / PCS / DCS /UMTS/ WCDMA
|
List of Unclassifed Man...
|
| GSA8821 |
I-Bar Penta-band GSM Antenna Works with GSM / CDMA / PCS / DCS /UMTS/ WCDMA
|
List of Unclassifed Man...
|
| MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| TA8721ASN E003944 |
TV/VIDEO CIRCUIT,TV SOUND RECEIVER CIRCUIT,BIPOLAR,SIP,12PIN,PLASTIC
From old datasheet system
DUAL SIF SYSTEM FOR TV
|
http://
Toshiba.
Toshiba Semiconductor
|
| MRF18030ASR3 MRF18030ALSR3 MRF18030ALR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| AD6528 |
GSM/GPRS Digital Baseband Processor For Smartphone and Wireless Handheld Devices
AD6528 GSM/GPRS SoftFonebaseband processor
|
Analog Devices
|
