PART |
Description |
Maker |
M5M51008CFP M5M51008CKR-55 M5M51008CKR-55X M5M5100 |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位(131072 - Word位)的CMOS静态RAM 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位(131072 - Word位)的CMOS静RAM Octal D-Type Transparent Latches With 3-State Outputs 20-SSOP -40 to 85
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
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M5M5V108CFP-10HI M5M5V108CFP-10XI M5M5V108CFP-70HI |
1048576-bit (131072-word by 8-bit) CMOS static RAM From old datasheet system 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位(131072 - Word位)的CMOS静态RAM
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http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
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HM628128FP-10 HM628128FP-12 HM628128FP-7 HM628128F |
100ns; V(cc): -0.5 to 7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM 120ns; V(cc): -0.5 to 7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM
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HITACHI[Hitachi Semiconductor]
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M5M51008BKR-15VLL-I M5M51008BKR-12VLL M5M51008BKR- |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
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Mitsubishi
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M5M28F101AFP |
1048576-BIT (131072-WORD BY 8-BIT) CMOS FLASH MEMORY
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Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
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M5M27C202JK-10 M5M27C202JK-12 M5M27C202JK-15 M5M27 |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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CXK581000AM CXK581000AM-10LL CXK581000AM-10SL CXK5 |
131072-word x 8-bit High Speed CMOS Static RAM
|
Sony Corporation
|
M5M5V216ART-70HI M5M5V216ART-55HI M5M5V216ATP M5M5 |
Memory>Low Power SRAM 2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM
|
Renesas Electronics Corporation
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M6MGT331S4BKT M6MGB331S4BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
|
Renesas Electronics Corporation
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M6MGD137W34DWG |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
|
Renesas Electronics Corporation
|
TC55VBM316AFTN TC55VBM316AFTN40 TC55VBM316AFTN55 T |
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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TOSHIBA[Toshiba Semiconductor]
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