| PART |
Description |
Maker |
| ISL9R18120G2 ISL9R18120P2 ISL9R18120S3S |
18A/ 1200V Stealth Diode
|
Fairchild Semiconductor
|
| APT2X31D120J APT2X30D120J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 1200V 30A
CONNECTOR ACCESSORY 双超快软恢复整流二极
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
|
| ISL9R18120S3S ISL9R18120G2 ISL9R18120P2 ISL9R18120 |
18A, 1200V STEALTH DIODE, TO263/D2PAK PACKAGE
18A, 1200V Stealth⑩ Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| ISL9K860P3 |
8A, 600V Stealth?/a> Dual Diode
8A, 600V Stealth Dual Diode
8A/ 600V Stealth Dual Diode
8A, 600V Stealth⑩ Dual Diode
8A, 600V StealthDual Diode
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| ISL8274MAIRZ |
30A/30A Dual-Channel Digital PMBus Step-Down Power Module
|
Renesas Electronics Corporation
|
| ISL9K460P3 |
4A,600V Stealth Dual Diode
|
Fairchild Semiconductor
|
| ISL9K1560G3 |
15A, 600V Stealth TM Dual Diode
|
Fairchild Semiconductor
|
| RHRP6120CC |
6A/ 1200V Hyperfast Dual Diode
6A, 1200V Hyperfast Dual Diode(6A, 1200V 超快双二极管)
|
INTERSIL[Intersil Corporation]
|
| DSEP29-12A |
30A,1200V SwitchMode Single Fast Recovery Epitaxial Diode
|
Thinki Semiconductor Co...
|
| X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9 |
:SEMITOP 3; Centres, fixing:52.5mm; Current, Ic av:40A; Current, Ic continuous b max:32A; RoHS Compliant: Yes
max:2.1V; Case style:SEMITOP 4; Current, Icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes
THYRISTOR MODULE, 3 PHASETHYRISTOR MODULE, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMITOP 3; Current, It rms:68A; Current, Itsm:450A; Voltage, Vgt
:SEMITOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, Ic continuous a
continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm RoHS Compliant: Yes
IGBT MODULE, H BRIDGE 1200VIGBT MODULE, H BRIDGE 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:54A
IGBT MODULE, CHOPPER 1200VIGBT MODULE, CHOPPER 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V
IGBT MODULE 6 PACK 114A 1200V TRENCHIGBT MODULE 6 PACK 114A 1200V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Voltage
:SEMITOP 2; Centres, fixing:38mm; Current, Ic av:23A; Current, Ic continuous b max:15A; RoHS Compliant: Yes
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V
IGBT MODULE, DUAL 1200VIGBT MODULE, DUAL 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, Ic
MOSFET MODULE, 6 PACK 75VMOSFET MODULE, 6 PACK 75V; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:100V; Case style:SEMITOP 2
RECTIFIER SCHOTTKY SINGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO
DIODE SCHOTTKY SINGLE 10V 150mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-523 3K/REEL
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:30A; Current, Icm pulsed:24A; Power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm;
Low Noise, Low Power, 32 Taps 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDIP8
IGBT MODULE 6 PACK 96A 600V TRENCHIGBT MODULE 6 PACK 96A 600V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Current, Ic continuous a max:100A
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, Ic continuous a max:22A; Current, Icm pulsed:44A; Power, Pd:1600W; Time,
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http://
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
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