| PART |
Description |
Maker |
| 1SS294 |
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS391 |
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS396 |
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
|
TOSHIBA[Toshiba Semiconductor]
|
| KDR377E |
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
KEC[KEC(Korea Electronics)]
|
| KDR784 |
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
KEC[KEC(Korea Electronics)]
|
| 1SS319 |
Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching
|
TOSHIBA
|
| HRB0103A |
Silicon Schottky Barrier Diode for Low Voltage High Speed Switching, Rectifying
|
Renesas Electronics Corporation
|
| 1SS293 |
Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching
|
TOSHIBA
|
| 1SS384 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching
|
TOSHIBA
|
| 1SS294 |
Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching
|
TOSHIBA
|
| 1SS396 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching
|
TOSHIBA
|