| PART |
Description |
Maker |
| ZUMT591 |
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 4.3 to 4.7; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Zetex Semiconductor PLC
|
| TMP87CM48U |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 9.7 to 10.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
|
Toshiba Corporation
|
| S5L9290X02-E0R0 |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.44 to 10.88; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| TMP86C822UG |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 3.10 to 3.35; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
|
Toshiba Corporation
|
| TMP19A71CYFG |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 22.93 to 23.96; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
|
Toshiba Corporation
|
| IRF1902PBF |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.0 to 5.2; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
|
International Rectifier
|
| TMP86C408NG |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 22.23 to 23.17; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
|
Toshiba Corporation
|
| TA1310ANG |
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 3.1 to 3.5; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35
|
Toshiba Corporation
|
| TMP86CP27AFG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 1.9 to 2.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 8位微控制
|
Toshiba, Corp.
|
| TMP86PS27FG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 6.6 to 6.9; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 8位微控制
|
Toshiba, Corp.
|
| TMP86CM29BUG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 22.9 to 24.0; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 8位微控制
|
Toshiba, Corp.
|
| TC7SG14AFS |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 22.9 to 25.5; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: LLD
Schmitt Inverter
|
Toshiba Corporation
Toshiba Semiconductor
|
