PART |
Description |
Maker |
L2N7002LT1 L2N7002LT1G |
Small Signal MOSFET 115 mAmps, 60 Volts
|
LRC[Leshan Radio Company]
|
L2N7003LT1 |
Small Signal MOSFET 115 mAmps 60 Volts
|
Leshan Radio Company
|
2N7000RLRPG 2N7000G 2N7000ZL1G |
Small Signal MOSFET 200 mAmps 60 Volts
|
ON Semiconductor
|
VN2406L VN2406LZL1 |
Small Signal MOSFET 200 mAmps, 240 Volts
|
ON Semiconductor
|
L2N7002LT1G11 L2N7002LT3G |
Small Signal MOSFET 115 mAmps, 60 Volts N?Channel SOT?3
|
Leshan Radio Company
|
NTR4003N NTR4003NT1G NTR4003NT3G |
30V N-Channel PowerTrench MOSFET 500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 Power MOSFET 30 V, 0.56 A. Single N-Channel SOT-23 Package; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 10000 500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 Small Signal MOSFET 30 V, 0.56 A, Single N−Channel, SOT−23
|
3M Company ON Semiconductor
|
2N7000G |
Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 200 mAMPS 60 VOLTS 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
ON Semiconductor
|
BS107_04 BS107 BS107A BS107AG BS107ARL1 BS107ARL1G |
Small Signal MOSFET 250 mAmps, 200 Volts 30V N-Channel PowerTrench MOSFET
|
ONSEMI[ON Semiconductor]
|
MMBTA43 MMBTA42 |
TRANSISTOR 500 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3, BIP General Purpose Small Signal 500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Vishay Semiconductors
|
MPSH10PSTOA FXT3866STZ UZTX415STOA UZTX415STOB ZTX |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR TO-92 COMPATIBLE, E-LINE PACKAGE-3 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR 200 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Diodes, Inc. Zetex Semiconductor PLC ZETEX PLC DIODES INC
|
MSAFZ15N40A MSAFX14N100A FSE1850 FSE1350 FSE1540 F |
N Channel MOSFET; Package: CoolPack1; trr (nsec): 120; t(on) (nsec): 180; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 300; BVDSS (V): 400; Rq: 0.4; VSD (V): 1.5 SMALL SIGNAL, FET N Channel MOSFET; Package: CoolPack1; trr (nsec): 850; t(on) (nsec): 60; ID (A): 14; RDS(on) (Ohms): 0.82; PD (W): 310; BVDSS (V): 1000; Rq: 0.25; VGS(th) (V): 4; VSD (V): 1.5 SMALL SIGNAL, FET N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 35; ID (A): 18; RDS(on) (Ohms): 0.28; PD (W): 150; BVDSS (V): 500; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 27; ID (A): 13; RDS(on) (Ohms): 0.4; PD (W): 125; BVDSS (V): 500; Rq: 1; VSD (V): 1.4 SMALL SIGNAL, FET N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 35; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 125; BVDSS (V): 400; Rq: 1; VSD (V): 1.6 SMALL SIGNAL, FET N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 33; ID (A): 20; RDS(on) (Ohms): 0.21; PD (W): 150; BVDSS (V): 400; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET N Channel MOSFET; Package: TO-257; trr (nsec): 660; t(on) (nsec): 17; ID (A): 5; RDS(on) (Ohms): 1; PD (W): 50; BVDSS (V): 400; Rq: 2; VSD (V): 1.6 5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
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