| PART |
Description |
Maker |
| 2SC311207 2SC3112 2SC3112-B |
150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier and Switching Applications
|
Toshiba Semiconductor
|
| 2SC332507 2SC3325 2SC3325-YTE85LF |
500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC732TM E001075 |
From old datasheet system
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
|
Mitsubishi Electric Semiconductor
Toshiba Semiconductor
|
| 2SC3421 E000843 |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Semiconductor
|
| 2SC5376F07 2SC5376F |
Silicon NPN Epitaxial Type Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| HN1B01F E001967 |
From old datasheet system
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SC4207 E000914 |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Semiconductor
|
| 2SC4738 E000984 |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Semiconductor
|
| 2SC3666 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| 2SC2240 |
Transistor Silicon NPN Epitaxial Type (PCT process) Low Noise Audio Amplifier Applications
|
TOSHIBA
|
| 2SC3421 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| HN1C01FU |
Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
TOSHIBA
|
