| PART |
Description |
Maker |
| IRFF130 IRFF131 IRFF132 IRFF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A.
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A.
|
General Electric Solid State
GE Solid State
|
| J113 J112 J111 |
RES CURRENT SENSE .005 OHM .75W
N-channel silicon field-effect transistors
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| CCR257 CCR250 CCR251 CCR252 CCR253 CCR254 CCR255 C |
Current Limiter Diode
CURRENT REGULATOR CHIPS
|
MICROSEMI[Microsemi Corporation]
|
| HX10-P HX03-P HX25-P HX50-P HX05-P HX15-P HX20-P |
Current Transducer HX 03~50-P
Current Transducer HX 03~50-P MAGNETIC FIELD SENSOR-HALL EFFECT, -4-4V, RECTANGULAR, THROUGH HOLE MOUNT
|
LEM[LEM]
LEM HOLDING SA
|
| 2SK372 |
Field Effect Transistor Silicon N Channel Junction Type For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications
|
TOSHIBA
|
| 2SJ107 |
Field Effect Transistor Silicon P Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
|
TOSHIBA
|
| CPL-16040-B11-2T CPL-16040-B11-3T CPL-16040-B12-2T |
140 MHz - 180 MHz RF/MICROWAVE LIMITER
110 MHz - 130 MHz RF/MICROWAVE LIMITER
150 MHz - 170 MHz RF/MICROWAVE LIMITER
18.9 MHz - 23.9 MHz RF/MICROWAVE LIMITER
50 MHz - 70 MHz RF/MICROWAVE LIMITER
|
Pascall Electronics, Ltd.
PASCALL ELECTRONICS LTD
|
| 2SJ624 2SJ624-T1B 2SJ624-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:80V; Forward Current Avg Rectified, IF(AV):60mA; Forward Voltage Max, VF:1V; Vf Test Current:200mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:60mA MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
| PSMN005-75P PSMN005-75B PSMN005_75P_75B-01 |
N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. 75 A, 75 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
From old datasheet system
N-channel enhancement mode field-effect transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| RFK35N10 RFK35N08 |
POWER MOS FIELD - EFFECT TRANSISTORS, N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| SSM3J120TU |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch Applications High-Current Switching Applications
|
Toshiba Semiconductor
|
| 2SJ626 2SJ626-T1B 2SJ626-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
