| PART |
Description |
Maker |
| PSMN005-75P PSMN005-75B PSMN005_75P_75B-01 |
N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. 75 A, 75 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
From old datasheet system
N-channel enhancement mode field-effect transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| IRF530_D ON0283 IRF530-D IRF530/D |
100V4A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管（N沟道增强型硅门）)
TMOS POWER FET 14 AMPERES
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| MRF255PHT |
RF Power Field-Effect Transistor
|
Motorola, Inc
|
| MW6S010GMR1 MW6S010GNR1 MW6S010MR1 MW6S010 MW6S010 |
RF Power Field Effect Transistor
|
飞思卡尔半导体(中国)有限公司
FREESCALE[Freescale Semiconductor, Inc]
Freescale (Motorola)
|
| MRF6P24190HR6 MRF6P24190HR608 |
RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
| MTM15N20 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|
| MTM20P10 |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA INC
Motorola, Inc
|
| 27271SL |
RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
| UFT150-28 |
RF POWER FIELD-EFFECT TRANSISTOR
|
Advanced Semiconductor, Inc.
|
| MTP6N10 |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| MTP2N80 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|
