| PART |
Description |
Maker |
| IRF5NJ540 |
Avalanche Energy Ratings
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.052ohm, Id=22A*)
SURFACE MOUNT (SMD-0.5)100V, N-CHANNEL
100V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package
|
IRF[International Rectifier]
|
| IRF5Y9540CM |
-100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package
THRU-HOLE (TO-257AA) 100V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)
|
International Rectifier
|
| IRF5Y540CM |
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
THRU-HOLE (TO-257AA) 100V, N-CHANNEL
POWER MOSFET N-CHANNEL(Vdss=100V Rds(on)=0.058ohm Id=18A*)
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.058ohm, Id=18A*)
|
IRF[International Rectifier]
|
| IRHN7150 JANSF2N7268U JANSH2N7268U IRHN3150 IRHN41 |
100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
100V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
100V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
CORD, COILED, 10MM STUD-4MM SKT, 4M; Length, lead:4m RoHS Compliant: NA
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) 抗辐射功率MOSFET表面贴装系统（SMD - 1
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| FDG361N |
N-Channel 100V Specified PowerTrench MOSFET
N-Channel 100V Specified PowerTrenchMOSFET
CAP CER 68PF 1KVDC U2J 1206
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| IRF5EA1310 |
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.036ohm, Id=23A)
THRU-HOLE MOUNT (LCC-28) 100V, N-CHANNEL
|
IRF[International Rectifier]
|
| IRHG7110 |
100V, 4 N-Channel Thru-Hole Radiation Hardened Power MOSFET(100V,通孔安装抗辐射功率四N沟道MOSFET)
|
International Rectifier
|
| FQU8P10 FQD8P10 FQD8P10TF FQD8P10TM FQU8P10TU |
100V P-Channel QFET
100V P-Channel MOSFET 6.6 A, 100 V, 0.53 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IRFP243R IRFF122R IRFF123R IRF621R IRFP140R IRFF12 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 8A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 8A条（丁）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 4.9A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 4.9AI（四）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 1A条（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 28A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 28A条（丁）|04AE
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 600MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 150伏五（巴西）直| 600毫安（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 100V的五（巴西）直|5A条（丁）|04AE
|
Black Box, Corp.
Bourns, Inc.
Vishay Intertechnology, Inc.
Samsung Semiconductor Co., Ltd.
3M Company
|
| IRF5N5210 |
-100V Single P-Channel Hi-Rel MOSFET in a SMD-2 package
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.060ohm, Id=-31A)
POWER MOSFET P-CHANNEL(Vdss=-100V/ Rds(on)=0.060ohm/ Id=-31A)
|
International Rectifier
|
| FQT7N10L FQT7N10LTF FQT7N10LL99Z |
100V N-Channel Logic Level QFET
100V LOGIC N-Channel MOSFET 1.7 A, 100 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
|
