| PART |
Description |
Maker |
| 2SCR544P5 |
NPN 80V 2.5A Medium Power Transistor
|
ROHM
|
| BSR33TA |
80V PNP MEDIUM POWER TRANSISTOR IN SOT89
|
Diodes
|
| DXT5616U-15 |
80V NPN MEDIUM POWER TRANSISTOR IN TO126
|
Diodes Incorporated
|
| 2SD1767 2SD1767R |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
Medium power transistor (80V, 0.7A)
|
Rohm CO.,LTD.
|
| 2SC1741AS 2SD1484 2SD1484K A5800323 2SC3359S 2SC33 |
50V,0.5A medium power transistor
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Medium Power Transistor (50V, 0.5A)
From old datasheet system
Medium Power Transistor (50V/ 0.5A)
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 300MA I(C) | SPAK
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | SPAK
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 50V五（巴西）总裁| 500mA的一（c）| SPAK
|
Rohm
|
| 2SD1055 2SD1766 D1758 2SD1758 2SD1919 2SD1862 A580 |
Medium Power Transistor (32V, 2A)
2000 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Medium Power Transistor 32V/ 2A
Medium Power Transistor 32V, 2A
Medium Power Transistor 32V 2A
From old datasheet system
|
ROHM[Rohm]
Rohm CO.,LTD.
|
| 2SD1664 2SD1858 A5800362 2SD1664P 2SD1664T100Q 2SD |
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
Medium Power Transistor (32V/ 1A)
Medium Power Transistor (32V, 1A)
From old datasheet system
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
Littelfuse
Rohm CO.,LTD.
ROHM[Rohm]
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| HUF75542S3S HUF75542P3 FN4845 HUF75542S3ST |
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 75A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 75A条（丁）|263AB
75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs 75 A, 80 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
75A/ 80V/ 0.014 Ohm/ N-Channel/ UltraFET Power MOSFETs
75A 80V 0.014 Ohm N-Channel UltraFET Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| DXT2013P5-13 DXT2013P5 DXT2013P5-15 |
100V PNP MEDIUM POWER TRANSISTOR PowerDI垄莽5
100V PNP MEDIUM POWER TRANSISTOR PowerDI庐5
100V PNP MEDIUM POWER TRANSISTOR PowerDI?5
|
Diodes Incorporated
|
| 2SA1036K 2SA854 2SA854S 2SA1577 A5800307 |
Medium Power Transistor (-32V/ -0.5A)
Medium Power Transistor (-32V, -0.5A)
From old datasheet system
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
|
Rohm
|
| 2SB1260R 2SB1260Q 2SB1241Q 2SB1181P |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SOT-89
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SIP 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 1A条一（c）|园区
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-252AA 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 1A条一（c）|52AA
|
Rohm Co., Ltd.
|
