| PART |
Description |
Maker |
| BS223 |
DMOS Transistors (P-Channel)
DMOS Transistors (P-Channel)(P通道DMOS晶体
|
GE[General Semiconductor]
GE Security, Inc.
|
| BS870 |
DMOS Transistors (N-Channel)
|
GE[General Semiconductor]
|
| 2N7000 |
DMOS Transistors (N-Channel)
|
http://
GE[General Semiconductor]
|
| BS109 |
DMOS Transistors (N-Channel)(N通道DMOS晶体 DMOS晶体管（N沟道）（不适用通道的DMOS晶体管）
|
GE Security, Inc.
GE[General Semiconductor]
|
| BS850 |
DMOS Transistors (P-Channel)(P通道DMOS晶体 DMOS晶体管（P沟道）性（P通道的DMOS晶体管）
|
GE Security, Inc.
GE[General Semiconductor]
|
| STP4403 |
STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STP9235 |
STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN9926AA |
The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
|
Stanson Technology
|
| STN4822 |
STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
|
Stanson Technology
|
| FQU6N50C FQD6N50C FQD6N50CTF FQD6N50CTM |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary planar stripe, DMOS technology
500V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| ZVP3310A ZVP3310 |
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET 140 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Zetex Semiconductors
Zetex Semiconductor PLC
|
| L6226PD L6226 L6226D L6226N L6207PD |
DUAL DMOS FULL BRIDGE MOTOR DRIVER
DMOS DUAL FULL BRIDGE DRIVER
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
