| PART |
Description |
Maker |
| TSAL7200 |
GaAs/GaAlAs IR Emitting Diode in ?5 mm (T-13/4) Package
GaAs/GaAlAs IR Emitting Diode in 庐5 mm (T-13/4) Package
GaAs/GaAlAs IR Emitting Diode in 5 mm (T-13/4) Package
From old datasheet system
GaAs/GaAlAs IR Emitting Diode in ?5 mm (T-13/4) Package
|
Vishay Telefunken
VISAY[Vishay Siliconix]
|
| TSAL6200 |
GaAs/GaAlAs IR Emitting Diode in 5 mm (T-1?) Package
|
Vishay
|
| TSAL5300 TSAL530009 TSAL5300-MSZ |
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
| TSAL510009 |
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
| VSML3710-GS08 VSML3710-GS18 VSML371009 |
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
| TSAL5100 |
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
| TSAL5100 |
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
VISAY[Vishay Siliconix]
|
| TSAL5300-GSZ TSAL5300 TSAL5300-FSZ |
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
VISAY[Vishay Siliconix]
|
| TSAL6200-ES21 |
TSAL6200 - High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
|
Vishay Semiconductors
|
| OP233 OP232 OP231 |
GaAs HERMETIC INFRARED EMITTING DIODES
GaALAs Hermetic Infrared Emitting Diode(铝砷化镓密封红外发光二极工作温度范围-65 125
|
OPTEK Technologies
Optek Technology
|
| TSIL6400 |
GaAs/GaAlAs IR Emitting Diodes in ? 5 mm Package
GaAs/GaAlAs IR Emitting Diodes in ┆ 5 mm Package
TSIL6400
|
TEMIC[TEMIC Semiconductors]
|
