| PART |
Description |
Maker |
| M5M512R M5M512R88DJ-10 M5M512R88DJ-12 M5M512R88DJ- |
1048576-BIT (131072-WORD BY 8-BIT) CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静态RAM
From old datasheet system
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
|
| CXK581000ATM/AYM/AM/AP-10LL CXK581000ATM/AYM/AM/AP |
128K X 8 STANDARD SRAM, 100 ns, PDIP32
128K X 8 STANDARD SRAM, 55 ns, PDSO32 8 X 20 MM, PLASTIC, TSOP1-32
131072-word x 8-bit High Speed CMOS Static RAM
131072-word x 8-bit High Speed CMOS Static RAM
|
Cypress Semiconductor, Corp.
SONY
|
| HN28F101 HN28F101CP-12 HN28F101CP-15 HN28F101CP-20 |
131072-word ?? 8-bit CMOS Flash Memory
|
ETC
|
| HN27C101AG |
131072-word 8-bit CMOS UV Erasable and Programmable ROM
|
Hitachi Semiconductor
|
| HM628128LP |
131072-word x 8-bit High Speed CMOS Static RAM
|
Hitachi,Ltd.
|
| CXK5V81000ATM-10LLX CXK5V81000ATM-85LLX |
131072-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
| HM658128A |
131072-word x 8-bit High Speed CMOS Pseudo Static RAM
|
Hitachi
|
| TC51WKM616AXBN75 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
| M5M51008BKV-10VL-I M5M51008BKV-10VLL-I M5M51008BKV |
1048576-bit (131072-word by 8-bit) CMOS static SRAM
|
Mitsubishi Electric Corporation
|
| M5M27C202JK-12I M5M27C202JK-15I M5M27C202K-12I M5M |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM 2097152位（131072字由16位）的CMOS电可擦除只读光盘可重复编
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
