PART |
Description |
Maker |
HIP5010 HIP5010IS HIP5010IS1 HIP5011 HIP5011IS HIP |
7V, 17A SynchroFET?/a> Complementary Drive Synchronous Half-Bridge FPGA - 1000000 SYSTEM GATE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN HB BASED PRPHL DRVR WITH PWM, PSSO7 Synchronous Half-Bridge Driver(同步半桥驱动 同步半桥驱动器(同步半桥驱动器) 7V, 17A SynchroFETComplementary Drive Synchronous Half-Bridge 7V, 17A SynchroFET⑩ Complementary Drive Synchronous Half-Bridge From old datasheet system 7V, 17A SynchroFET?Complementary Drive Synchronous Half-Bridge 7V, 17A SynchroFET Complementary Drive Synchronous Half-Bridge 7V/ 17A SynchroFET Complementary Drive Synchronous Half-Bridge 7V, 17A SynchroFET?/a> Complementary Drive Synchronous Half-Bridge
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Intersil, Corp. INTERSIL[Intersil Corporation]
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SI4860DY |
N-Channel MOSFET, 30V(D-S) , Reduced Qg, Fast-Switching N沟道MOSFET0V(D-S),Qg,快速开 N-Channel Reduced Qg, Fast Switching MOSFE
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Vishay Intertechnology, Inc. Vishay Siliconix
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MJF6668 ON2050 MJF6388 MJF6688 |
Complementary power darlington From old datasheet system COMPLEMENTARY SILICON POWER DARLINGTONS 10 AMPERES 100 VOLTS 40 WATTS
|
ONSEMI[ON Semiconductor] Motorola, Inc MOTOROLA INC
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MMDF2C03HD ON2158 MMDF2C03HD-D |
Complementary TMOS Field Effect Transistors COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS From old datasheet system
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ON Semiconductor MOTOROLA[Motorola, Inc]
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MJH6287 MJH6284 ON2053 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS From old datasheet system 20 AMPERE COMPLEMENTARY SILICON
|
ONSEMI[ON Semiconductor]
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NTHD3100C NTHD3100CT1 NTHD3100CT1G NTHD3100CT3 NTH |
Power MOSFET Complementary, 20 V, 3.9 A/-4.4 A ChipFET™ Power MOSFET Complementary, 20 V, 3.9 A/-4.4 A ChipFET™; Package: ChipFET™; No of Pins: 8; Container: Tape and Reel; Qty per Container: 3000 2.9 A, 20 V, 0.08 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET Power MOSFET 20V, 3.9A/4.4A, Complementary ChipFET(20V, 3.9A/4.4A功率MOSFET) Power MOSFET 20 V, 3.9 A /−4.4 A, Complementary ChipFET
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ON Semiconductor
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D44H06 D45H8G D44H D44H11 D44H11G D44H8 D44H8G D45 |
Complementary Silicon Power Transistor(互补型PNP硅功率晶体管) Complementary Silicon Power Transistors
|
ONSEMI[ON Semiconductor]
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CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772 Audio Frequency Power Amplifier and Low Speed Switching Applications
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CDIL[Continental Device India Limited]
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MJE240 MJE243 MJE252 MJE254 MJE241 MJE242 MJE244 M |
Leaded Power Transistor General Purpose COMPLEMENTARY SILICON POWER TRANSISTORS 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126 (MJE250 - MJE254 / MJE240 - MJE244) COMPLEMENTARY SILICON POWER TRANSISTORS From old datasheet system
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Central Semiconductor, Corp. CENTRAL[Central Semiconductor Corp] http://
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ICS8302-01 ICS8302AM-01T 8302A01 ICS8302AM-01 |
Low Skew, 1-to-2, Fanout Buffer w/ Complementary Outputs LOW SKEW, 1-TO-2 LVCMOS / LVTTL FANOUT BUFFER W/ COMPLEMENTARY OUTPUT
|
http:// ICST[Integrated Circuit Systems]
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MJ2500 MJ3000 MJ1250 MJ3001 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS
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MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
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