PART |
Description |
Maker |
JAN1N3612 JANTX1N3957 |
DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL, PLASTIC, EG1, 2 PIN, Signal Diode DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AL, Signal Diode
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Vishay Semiconductors
|
1N347 1N256 1N2029 1N2370 1N1342B 1N338 |
1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 600 V, SILICON, SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE 1 A, 2000 V, SILICON, SIGNAL DIODE 6 A, 100 V, SILICON, RECTIFIER DIODE
|
|
FM4006L-HF-W FM4007L-HF FM4003L FM4004L-HF-T |
1 A, 800 V, SILICON, SIGNAL DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE
|
RECTRON LTD
|
BAY8012 BAY80-TAP |
Small Signal Switching Diode, High Voltage DIODE 0.2 A, 150 V, SILICON, SIGNAL DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Signal Diode
|
Vishay Siliconix Vishay Semiconductors
|
GP10YHE3/73 GP10YHE3/54 GP10W-E3/54 GP10VHE3/73 |
1 A, 1600 V, SILICON, SIGNAL DIODE, DO-204AL ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN 1 A, 1500 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 1400 V, SILICON, SIGNAL DIODE, DO-204AL
|
Vishay Beyschlag VISHAY SEMICONDUCTORS
|
BYW27-200TR BYW27-1000TR BYW27-100TR BYW27-400AMP |
1 A, 200 V, SILICON, SIGNAL DIODE PLASTIC PACKAGE-2 1 A, 1000 V, SILICON, SIGNAL DIODE PLASTIC PACKAGE-2 1 A, 100 V, SILICON, SIGNAL DIODE PLASTIC PACKAGE-2 1 A, 400 V, SILICON, SIGNAL DIODE PLASTIC PACKAGE-2 1 A, 600 V, SILICON, SIGNAL DIODE PLASTIC PACKAGE-2
|
Vishay Beyschlag TE Connectivity, Ltd. TOKO, Inc.
|
BYM11-50 BYM11-800 BYM11-600 BYM11-400 BYM11-100 B |
1 A, 100 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2 1 A, 600 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2 Surface Mount Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0 A
|
Vishay Beyschlag
|
J4248 SV4247US SV4248US SV4249US |
1 A, 800 V, SILICON, SIGNAL DIODE 1 A, 600 V, SILICON, SIGNAL DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE
|
SENSITRON SEMICONDUCTOR
|
1N4150-1 JANTXV1N4150-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35 SWITCHING DIODE
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
JANTXSSM225UF-A JANTXSAL175UF-A JANTXSSM200UF-A JA |
1 A, SILICON, SIGNAL DIODE HERMETIC SEALED, MELF-A, 2PIN 1 A, SILICON, SIGNAL DIODE HERMETIC SEALED PACKAGE-2 HERMETIC ULTRAFAST DIODE 1 A, SILICON, SIGNAL DIODE
|
Sensitron Semiconductor
|
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