| PART |
Description |
Maker |
| HY5V66GF HY5V66GF-H HY5V66GF-P |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM
4Mx16|3.3V|4K|H|SDR SDRAM - 64M
x16 SDRAM x16内存
|
Hynix Semiconductor
TT electronics Semelab, Ltd.
|
| K522H1HACF-B050 |
2Gb (128M x16) NAND Flash 1Gb (64M x16 ) Mobile DDR SDRAM
|
Samsung semiconductor
|
| HY57V561620HLT HY57V561620HT-H |
x16 SDRAM
IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
|
Hynix
|
| K4X56163PE-LG K4X56163PE-LFG |
16M x16 Mobile DDR SDRAM 1,600 x16移动DDR SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| UPD4516161G5-A15-7JF UPD4516421G5-A15-7JF UPD45168 |
x4 SDRAM
x8 SDRAM
x16 SDRAM x16内存
|
Mitsubishi Electric, Corp.
|
| MT40A512M16JY-075EAIT MT40A512M16JY-083E |
8Gb: x4, x8, x16 DDR4 SDRAM
Automotive DDR4 SDRAM
|
Micron Technology
|
| IS43DR81280 |
1Gb (x8, x16) DDR2 SDRAM
|
Integrated Silicon Solution, Inc
|
| MT47H32M16CC3B |
512Mb: x4, x8, x16 DDR2 SDRAM
|
Micron Technology
|
| HYB18T256161BF-28 |
256-Mbit x16 DDR2 SDRAM
|
http://
|
| HYB18T512161BF-20 HYB18T512161BF-22 HYB18T512161BF |
512-Mbit x16 DDR2 SDRAM
|
Qimonda AG
|
| K4X56163PE-LG K4X56163PE K4X56163PE-LFG |
16M x16 Mobile DDR SDRAM
|
SAMSUNG[Samsung semiconductor]
|
| MT46V64M8 MT46V64M8P-5BF MT46V32M16 MT46V32M16P-6T |
Double Data Rate (DDR) SDRAM
512Mb: x4, x8, x16 Double Data Rate (DDR) SDRAM SDRAM Features
512Mb: x4, x8, x16 Double Data Rate SDRAM Features
|
Alliance Semiconductor ...
Micron Technology
|
